| Presentation | 2022-06-21 Formation of Ultra-Thin Nickel Silicide Layer with controlled Surface Morphology and Crystalline Phase on SiO2 Keisuke Kimura, Noriyuki Taoka, Shunsuke Nishimura, Akio Ohta, Katsunori Makihara, Seiichi Miyazaki, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Recently, a device with metal nanosheet (MNS) has been attracted much attention. However, control of surface morphology and crystalline phase of MNS on SiO2 is not enough for realizing the device. Formation of nickel silicide NS was challenged using a solid phase interdiffusion method, which contains deposition of different thicknesses of Ni and Si films on SiO2 and subsequent annealing. As a result, we found that reactions of oxidation and reduction have an important role when silicidation occurs in MNS. In a thick nickel silicide film, several types of crystalline phases exist after annealing. In this study, the nickel silicide NS with only Ni2Si phase and smooth surface is successfully formed. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Thin film / Crystalline phase / Chemical bonding feature / Surface morphology / Metal-Silicide |
| Paper # | SDM2022-31 |
| Date of Issue | 2022-06-14 (SDM) |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 2022/6/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Nagoya Univ. VBL3F |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Material Science and Process Technology for MOS Devices, Memories, and Power Devices |
| Chair | Hiroshige Hirano(TowerPartners Semiconductor) |
| Vice Chair | Shunichiro Ohmi(Tokyo Inst. of Tech.) |
| Secretary | Shunichiro Ohmi(AIST) |
| Assistant | Taiji Noda(Panasonic) / Tomoyuki Suwa(Tohoku Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Formation of Ultra-Thin Nickel Silicide Layer with controlled Surface Morphology and Crystalline Phase on SiO2 |
| Sub Title (in English) | |
| Keyword(1) | Thin film |
| Keyword(2) | Crystalline phase |
| Keyword(3) | Chemical bonding feature |
| Keyword(4) | Surface morphology |
| Keyword(5) | Metal-Silicide |
| 1st Author's Name | Keisuke Kimura |
| 1st Author's Affiliation | Nagoya University(Nagoya. Univ) |
| 2nd Author's Name | Noriyuki Taoka |
| 2nd Author's Affiliation | Nagoya University(Nagoya. Univ) |
| 3rd Author's Name | Shunsuke Nishimura |
| 3rd Author's Affiliation | Nagoya University(Nagoya. Univ) |
| 4th Author's Name | Akio Ohta |
| 4th Author's Affiliation | Nagoya University(Nagoya. Univ) |
| 5th Author's Name | Katsunori Makihara |
| 5th Author's Affiliation | Nagoya University(Nagoya. Univ) |
| 6th Author's Name | Seiichi Miyazaki |
| 6th Author's Affiliation | Nagoya University(Nagoya. Univ) |
| Date | 2022-06-21 |
| Paper # | SDM2022-31 |
| Volume (vol) | vol.122 |
| Number (no) | SDM-84 |
| Page | pp.pp.27-30(SDM), |
| #Pages | 4 |
| Date of Issue | 2022-06-14 (SDM) |