| Presentation | 2022-05-27 Wet etching of GaN utilizing a photo-electrochemical reaction for functional materials Taketomo Sato, Masachika Toguchi, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A gallium nitride (GaN) porous structure was formed by wet etching utilizing electrochemical reactions. The refractive index of the GaN porous layer can be controlled by the porosity or aperture ratio, and its optical reflectance decreases depending on that. The incident-photon-to-current conversion efficiency (IPCE) of the interface between the GaN porous structure and the electrolyte increased by about 40% compared to that obtained on the unprocessed sample, and the basic absorption edge of the GaN porous structure was shifted in the long-wavelength direction. These characteristics of the GaN porous structure that has the high crystal quality are useful as a functional material. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Gallium Nitride / Electrochemical Etching / Porous Structure |
| Paper # | ED2022-13,CPM2022-7,SDM2022-20 |
| Date of Issue | 2022-05-20 (ED, CPM, SDM) |
| Conference Information | |
| Committee | SDM / ED / CPM |
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| Conference Date | 2022/5/27(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Online |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Functional Device Materials, Fabrication, Characterization, and Related Technology |
| Chair | Hiroshige Hirano(TowerPartners Semiconductor) / Hiroki Fujishiro(Tokyo Univ. of Science) / Yuichi Nakamura(Toyohashi Univ. of Tech.) |
| Vice Chair | Shunichiro Ohmi(Tokyo Inst. of Tech.) / Seiya Sakai(Hokkaido Univ.) / Hideki Nakazawa(Hirosaki Univ.) |
| Secretary | Shunichiro Ohmi(AIST) / Seiya Sakai(Nihon Univ.) / Hideki Nakazawa(Fjitsu Lab.) |
| Assistant | Taiji Noda(Panasonic) / Tomoyuki Suwa(Tohoku Univ.) / Ryota Isonoi(SCIOCS) / Yoshitugu Yamamoto(Mitsubishi Electric) / Yasuo Kimura(Tokyo Univ. of Tech.) / Fumihiko Hirose(Yamagata Univ.) / Noriko Bamba(Shinshu Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials / Technical Committee on Electron Devices / Technical Committee on Component Parts and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Wet etching of GaN utilizing a photo-electrochemical reaction for functional materials |
| Sub Title (in English) | |
| Keyword(1) | Gallium Nitride |
| Keyword(2) | Electrochemical Etching |
| Keyword(3) | Porous Structure |
| 1st Author's Name | Taketomo Sato |
| 1st Author's Affiliation | Hokkaido University(Hokkaido Univ.) |
| 2nd Author's Name | Masachika Toguchi |
| 2nd Author's Affiliation | Hokkaido University(Hokkaido Univ.) |
| Date | 2022-05-27 |
| Paper # | ED2022-13,CPM2022-7,SDM2022-20 |
| Volume (vol) | vol.122 |
| Number (no) | ED-52,CPM-53,SDM-54 |
| Page | pp.pp.25-28(ED), pp.25-28(CPM), pp.25-28(SDM), |
| #Pages | 4 |
| Date of Issue | 2022-05-20 (ED, CPM, SDM) |