| Presentation | 2022-05-27 Reactive Sputtering of Nitride Dielectric Film for Silicon Photonics Applications Takaaki Fukushima, Jose A. Piedra Lorenzana, Rui Tsuchiya, Takeshi Hizawa, Yasuhiko Ishikawa, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | SiNx possesses a thermo-optic coefficient smaller by approximately one order of magnitude than that of Si, being effective for fabricating Si photonics devices such as an optical multiplexer/demultiplexer with a thermally stable operation. A low-loss optical waveguide is reported using a SiNx film deposited by reactive sputtering at a relatively low deposition temperature of 200?C. An AlN film with a refractive index as large as 2.0, similar to SiNx, is also deposited by reactive sputtering. No electro-optic effect is present in SiNx, while AlN ideally possesses an electro-optic coefficient on the order of 0.1 pm/V, potentially realizing optical modulation/switching devices including an optical intensity modulator. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Silicon photonics / Reactive sputtering / Low-Temperature deposition / Silicon nitride / Aluminum nitride |
| Paper # | ED2022-10,CPM2022-4,SDM2022-17 |
| Date of Issue | 2022-05-20 (ED, CPM, SDM) |
| Conference Information | |
| Committee | SDM / ED / CPM |
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| Conference Date | 2022/5/27(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Online |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Functional Device Materials, Fabrication, Characterization, and Related Technology |
| Chair | Hiroshige Hirano(TowerPartners Semiconductor) / Hiroki Fujishiro(Tokyo Univ. of Science) / Yuichi Nakamura(Toyohashi Univ. of Tech.) |
| Vice Chair | Shunichiro Ohmi(Tokyo Inst. of Tech.) / Seiya Sakai(Hokkaido Univ.) / Hideki Nakazawa(Hirosaki Univ.) |
| Secretary | Shunichiro Ohmi(AIST) / Seiya Sakai(Nihon Univ.) / Hideki Nakazawa(Fjitsu Lab.) |
| Assistant | Taiji Noda(Panasonic) / Tomoyuki Suwa(Tohoku Univ.) / Ryota Isonoi(SCIOCS) / Yoshitugu Yamamoto(Mitsubishi Electric) / Yasuo Kimura(Tokyo Univ. of Tech.) / Fumihiko Hirose(Yamagata Univ.) / Noriko Bamba(Shinshu Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials / Technical Committee on Electron Devices / Technical Committee on Component Parts and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Reactive Sputtering of Nitride Dielectric Film for Silicon Photonics Applications |
| Sub Title (in English) | |
| Keyword(1) | Silicon photonics |
| Keyword(2) | Reactive sputtering |
| Keyword(3) | Low-Temperature deposition |
| Keyword(4) | Silicon nitride |
| Keyword(5) | Aluminum nitride |
| 1st Author's Name | Takaaki Fukushima |
| 1st Author's Affiliation | Toyohashi University of Technology(Toyohashi Univ. Tech.) |
| 2nd Author's Name | Jose A. Piedra Lorenzana |
| 2nd Author's Affiliation | Toyohashi University of Technology(Toyohashi Univ. Tech.) |
| 3rd Author's Name | Rui Tsuchiya |
| 3rd Author's Affiliation | Toyohashi University of Technology(Toyohashi Univ. Tech.) |
| 4th Author's Name | Takeshi Hizawa |
| 4th Author's Affiliation | Toyohashi University of Technology(Toyohashi Univ. Tech.) |
| 5th Author's Name | Yasuhiko Ishikawa |
| 5th Author's Affiliation | Toyohashi University of Technology(Toyohashi Univ. Tech.) |
| Date | 2022-05-27 |
| Paper # | ED2022-10,CPM2022-4,SDM2022-17 |
| Volume (vol) | vol.122 |
| Number (no) | ED-52,CPM-53,SDM-54 |
| Page | pp.pp.13-16(ED), pp.13-16(CPM), pp.13-16(SDM), |
| #Pages | 4 |
| Date of Issue | 2022-05-20 (ED, CPM, SDM) |