Presentation 2022-04-22
Mechanism for improving electrical properties of InGaZnOx thin-film transistors through annealing
Rostislav Velichko, Yusaku Magari, Mamoru Furuta,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English)
Keyword(in Japanese) (See Japanese page)
Keyword(in English)
Paper # SDM2022-4,OME2022-4
Date of Issue 2022-04-15 (SDM, OME)

Conference Information
Committee OME / SDM
Conference Date 2022/4/22(2days)
Place (in Japanese) (See Japanese page)
Place (in English) Takachiho Hall
Topics (in Japanese) (See Japanese page)
Topics (in English) Thin film devices (Si, compound, organic, flexible), Biotechnology, Materials, Characterization, etc.
Chair Toshiki Yamada(NICT) / Hiroshige Hirano(TowerPartners Semiconductor)
Vice Chair Eiji Itoh(Shinshu Univ.) / Shunichiro Ohmi(Tokyo Inst. of Tech.)
Secretary Eiji Itoh(Osaka Univ.) / Shunichiro Ohmi(Tokyo Univ. of Agriculture and Tech.)
Assistant Yoshiyuki Seike(Aichi Inst. of Tech.) / Akira Baba(Niigata Univ.) / Taiji Noda(Panasonic) / Tomoyuki Suwa(Tohoku Univ.)

Paper Information
Registration To Technical Committee on Organic Molecular Electronics / Technical Committee on Silicon Device and Materials
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Mechanism for improving electrical properties of InGaZnOx thin-film transistors through annealing
Sub Title (in English)
Keyword(1)
Keyword(2)
Keyword(3)
Keyword(4)
1st Author's Name Rostislav Velichko
1st Author's Affiliation Kochi University of Technology(KUT)
2nd Author's Name Yusaku Magari
2nd Author's Affiliation Shimane University(Shimane Univ.)
3rd Author's Name Mamoru Furuta
3rd Author's Affiliation Kochi University of Technology(KUT)
Date 2022-04-22
Paper # SDM2022-4,OME2022-4
Volume (vol) vol.122
Number (no) SDM-8,OME-9
Page pp.pp.17-20(SDM), pp.17-20(OME),
#Pages 4
Date of Issue 2022-04-15 (SDM, OME)