Presentation 2022-03-07
MTJ-based non-volatile SRAM circuit with Approximate Image-data Storing for energy saving
Hisato Miyauchi, Kimiyoshi Usami,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) Non-volatile memory (NVM) using magnetic tunnel junction (MTJ) devices can prevent the increase in leakage current, which has become a problem in recent years, because it allows fine-grained power supply interruption. However, MTJ has a problem of large store energy. In this study, we propose an NVSRAM that achieves low energy consumption by applying Approximate Storing, which divides the data bit strings and reduces the store time in the parts that do not require accurate store. The energy reduction during image storage was evaluated by simulation in the 65nm process.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) SRAM / Power-Gating / MTJ / Approximate Computing
Paper # VLD2021-86,HWS2021-63
Date of Issue 2022-02-28 (VLD, HWS)

Conference Information
Committee VLD / HWS
Conference Date 2022/3/7(2days)
Place (in Japanese) (See Japanese page)
Place (in English) Online
Topics (in Japanese) (See Japanese page)
Topics (in English) Design Technology for System-on-Silicon, Hardware Security, etc.
Chair Kazutoshi Kobayashi(Kyoto Inst. of Tech.) / Yasuhisa Shimazaki(Renesas Electronics)
Vice Chair Minako Ikeda(NTT) / Makoto Nagata(Kobe Univ.) / Daisuke Suzuki(Mitsubishi Electric)
Secretary Minako Ikeda(Osaka Univ.) / Makoto Nagata(NEC) / Daisuke Suzuki(NTT)
Assistant

Paper Information
Registration To Technical Committee on VLSI Design Technologies / Technical Committee on Hardware Security
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) MTJ-based non-volatile SRAM circuit with Approximate Image-data Storing for energy saving
Sub Title (in English)
Keyword(1) SRAM
Keyword(2) Power-Gating
Keyword(3) MTJ
Keyword(4) Approximate Computing
1st Author's Name Hisato Miyauchi
1st Author's Affiliation Shibaura Institute of Technology(SIT)
2nd Author's Name Kimiyoshi Usami
2nd Author's Affiliation Shibaura Institute of Technology(SIT)
Date 2022-03-07
Paper # VLD2021-86,HWS2021-63
Volume (vol) vol.121
Number (no) VLD-412,HWS-413
Page pp.pp.51-56(VLD), pp.51-56(HWS),
#Pages 6
Date of Issue 2022-02-28 (VLD, HWS)