| Presentation | 2022-01-31 [Invited Talk] **** Kei Sumita, Chia-Tsong Chen, Kasidit Toprasertpong, Mitsuru Takenaka, Shinich Takagi, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Mobility reduction due to surface roughness scattering is a critical concern for Extremely-Thin-Body (ETB) nanosheet channels. However, the conventional scattering model cannot explain the experimental results with realistic roughness. In this study, we have proposed a new model of surface roughness scattering, which can explain the experimental mobility of SOI, GOI and InAs-OI nMOSFETs with roughness parameters obtained experimentally from TEM images. Based on this model, we deliver the assessment on the optimum ETB channels down to 2 nm. As a result, the anisotropic valley with heavy confinement mass is expected to have the high immunity to mobility reduction by surface roughness. In particular, (111) GOI is most expected thanks to the strong anisotropy of the L valley and have the excellent surface-roughness-limited electron mobility even in the 2-nm-thick channels, which is an advantage over 2D materials. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Extremely-Thin-Body / Nanosheet / MOSFET / Surface Roughness Scattering / Mobility |
| Paper # | SDM2021-71 |
| Date of Issue | 2022-01-24 (SDM) |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 2022/1/31(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Online |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Hiroshige Hirano(TowerPartners Semiconductor) |
| Vice Chair | Shunichiro Ohmi(Tokyo Inst. of Tech.) |
| Secretary | Shunichiro Ohmi(AIST) |
| Assistant | Taiji Noda(Panasonic) / Tomoyuki Suwa(Tohoku Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | [Invited Talk] **** |
| Sub Title (in English) | |
| Keyword(1) | Extremely-Thin-Body |
| Keyword(2) | Nanosheet |
| Keyword(3) | MOSFET |
| Keyword(4) | Surface Roughness Scattering |
| Keyword(5) | Mobility |
| 1st Author's Name | Kei Sumita |
| 1st Author's Affiliation | University of Tokyo(Univ.of Tokyo) |
| 2nd Author's Name | Chia-Tsong Chen |
| 2nd Author's Affiliation | University of Tokyo(Univ.of Tokyo) |
| 3rd Author's Name | Kasidit Toprasertpong |
| 3rd Author's Affiliation | University of Tokyo(Univ.of Tokyo) |
| 4th Author's Name | Mitsuru Takenaka |
| 4th Author's Affiliation | University of Tokyo(Univ.of Tokyo) |
| 5th Author's Name | Shinich Takagi |
| 5th Author's Affiliation | University of Tokyo(Univ.of Tokyo) |
| Date | 2022-01-31 |
| Paper # | SDM2021-71 |
| Volume (vol) | vol.121 |
| Number (no) | SDM-365 |
| Page | pp.pp.12-15(SDM), |
| #Pages | 4 |
| Date of Issue | 2022-01-24 (SDM) |