| Presentation | 2022-01-31 [Invited Talk] **** Reika Ichihara, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | e establish an accurate picture of cycling degradation in HfO2-FeFET based on the dynamics of various charge-trapping revealed by fast charge centroid analysis. Cycling-induced fixed electron at HfO2/SiO2 interface induces an additional reversible hole-trapping leading to Vth window narrowing. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | ferroelectric / HfO2 / FeFET / charge-trapping / spontaneous polarization / cycling degradation / Vth window |
| Paper # | SDM2021-70 |
| Date of Issue | 2022-01-24 (SDM) |
| Conference Information | |
| Committee | SDM |
|---|---|
| Conference Date | 2022/1/31(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Online |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Hiroshige Hirano(TowerPartners Semiconductor) |
| Vice Chair | Shunichiro Ohmi(Tokyo Inst. of Tech.) |
| Secretary | Shunichiro Ohmi(AIST) |
| Assistant | Taiji Noda(Panasonic) / Tomoyuki Suwa(Tohoku Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | [Invited Talk] **** |
| Sub Title (in English) | |
| Keyword(1) | ferroelectric |
| Keyword(2) | HfO2 |
| Keyword(3) | FeFET |
| Keyword(4) | charge-trapping |
| Keyword(5) | spontaneous polarization |
| Keyword(6) | cycling degradation |
| Keyword(7) | Vth window |
| 1st Author's Name | Reika Ichihara |
| 1st Author's Affiliation | Kioxia(Kioxia) |
| Date | 2022-01-31 |
| Paper # | SDM2021-70 |
| Volume (vol) | vol.121 |
| Number (no) | SDM-365 |
| Page | pp.pp.9-11(SDM), |
| #Pages | 3 |
| Date of Issue | 2022-01-24 (SDM) |