| Presentation | 2021-11-26 Fabrication and electrical property characterization of AlGaN channel HEMT on AlN template Ryuichi Mori, Kenjiro Uesugi, Shegeyuki Kuboya, Kanako Shojiki, Hideto Miyake, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | $Al_{0.85}Ga_{0.15}N$/$Al_{0.60}Ga_{0.40}N$ HEMT structures with channel thicknesses of 100?1000 nm were grown on low-dislocation-density AlN templates prepared by a combination of sputtering and high-temperature annealing using the MOVPE method, and the effect of channel thickness on HEMT properties was investigated. Both the surface flatness and crystallinity of the HEMT structure decreased with increasing channel thickness, while the sheet carrier concentration and Hall mobility increased with increasing channel thickness up to 500 nm, and then began to decrease. The I-V characteristics of HEMT with a channel thickness of 500 nm indicated a saturation current density of 7.6 mA/mm, and the off-state characteristics exhibited a breakdown voltage of 1 kV with drain-source length of 20 $mu$m. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | AlGaN / MOVPE / 2DEG / Electron mobility / AlGaN channel |
| Paper # | ED2021-33,CPM2021-67,LQE2021-45 |
| Date of Issue | 2021-11-18 (ED, CPM, LQE) |
| Conference Information | |
| Committee | ED / CPM / LQE |
|---|---|
| Conference Date | 2021/11/25(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Online |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Hiroki Fujishiro(Tokyo Univ. of Science) / Yuichi Nakamura(Toyohashi Univ. of Tech.) / Toshitada Umezawa(NICT) |
| Vice Chair | Seiya Sakai(Hokkaido Univ.) / Hideki Nakazawa(Hirosaki Univ.) / Junichi Takahara(Osaka Univ.) |
| Secretary | Seiya Sakai(Fjitsu Lab.) / Hideki Nakazawa(NTT) / Junichi Takahara(Ehime Univ.) |
| Assistant | Ryota Isonoi(SCIOCS) / Yoshitugu Yamamoto(Mitsubishi Electric) / Yasuo Kimura(Tokyo Univ. of Tech.) / Fumihiko Hirose(Yamagata Univ.) / Noriko Bamba(Shinshu Univ.) / Shinsuke Tanaka(Fujitsu) / Nobuhiko Nishiyama(Tokyo Inst. of Tech.) |
| Paper Information | |
| Registration To | Technical Committee on Electron Devices / Technical Committee on Component Parts and Materials / Technical Committee on Lasers and Quantum Electronics |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication and electrical property characterization of AlGaN channel HEMT on AlN template |
| Sub Title (in English) | |
| Keyword(1) | AlGaN |
| Keyword(2) | MOVPE |
| Keyword(3) | 2DEG |
| Keyword(4) | Electron mobility |
| Keyword(5) | AlGaN channel |
| 1st Author's Name | Ryuichi Mori |
| 1st Author's Affiliation | Mie University(Mie Univ.) |
| 2nd Author's Name | Kenjiro Uesugi |
| 2nd Author's Affiliation | Mie University(Mie Univ.) |
| 3rd Author's Name | Shegeyuki Kuboya |
| 3rd Author's Affiliation | Mie University(Mie Univ.) |
| 4th Author's Name | Kanako Shojiki |
| 4th Author's Affiliation | Mie University(Mie Univ.) |
| 5th Author's Name | Hideto Miyake |
| 5th Author's Affiliation | Mie University(Mie Univ.) |
| Date | 2021-11-26 |
| Paper # | ED2021-33,CPM2021-67,LQE2021-45 |
| Volume (vol) | vol.121 |
| Number (no) | ED-259,CPM-260,LQE-261 |
| Page | pp.pp.83-86(ED), pp.83-86(CPM), pp.83-86(LQE), |
| #Pages | 4 |
| Date of Issue | 2021-11-18 (ED, CPM, LQE) |