Presentation 2021-11-25
Theoretical modeling of temperature-dependent PL spectra in InGaN quantum wells
Shunya Hakamata, Takashi Fujita, Ryuichi Watanabe, Atsushi A Yamaguchi,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) InGaN quantum-well (QW) light-emitting devices can cover the entire visible spectrum in principle, by changing the In composition, but there is a problem that the efficiency drops in longer wavelength region. In order to solve this problem, it is important to understand the electronic structures and carrier dynamics in InGaN QWs. In this study, we have tried to reproduce the experimental results of temperature-dependent PL spectra for a series of InGaN-QW samples with different In compositions by using a single theoretical model. We have newly constructed a theoretical model that takes into account the band gap fluctuation due to the In composition fluctuation and the carrier localization, and have fitted it to the experimental results. As a result, the PL spectra have been fitted in the whole temperature range and the values of the parameters were reasonable.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) InGaN quantum well / PL spectrum / temperature dependence / alloy fluctuation
Paper # ED2021-23,CPM2021-57,LQE2021-35
Date of Issue 2021-11-18 (ED, CPM, LQE)

Conference Information
Committee ED / CPM / LQE
Conference Date 2021/11/25(2days)
Place (in Japanese) (See Japanese page)
Place (in English) Online
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair Hiroki Fujishiro(Tokyo Univ. of Science) / Yuichi Nakamura(Toyohashi Univ. of Tech.) / Toshitada Umezawa(NICT)
Vice Chair Seiya Sakai(Hokkaido Univ.) / Hideki Nakazawa(Hirosaki Univ.) / Junichi Takahara(Osaka Univ.)
Secretary Seiya Sakai(Fjitsu Lab.) / Hideki Nakazawa(NTT) / Junichi Takahara(Ehime Univ.)
Assistant Ryota Isonoi(SCIOCS) / Yoshitugu Yamamoto(Mitsubishi Electric) / Yasuo Kimura(Tokyo Univ. of Tech.) / Fumihiko Hirose(Yamagata Univ.) / Noriko Bamba(Shinshu Univ.) / Shinsuke Tanaka(Fujitsu) / Nobuhiko Nishiyama(Tokyo Inst. of Tech.)

Paper Information
Registration To Technical Committee on Electron Devices / Technical Committee on Component Parts and Materials / Technical Committee on Lasers and Quantum Electronics
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Theoretical modeling of temperature-dependent PL spectra in InGaN quantum wells
Sub Title (in English)
Keyword(1) InGaN quantum well
Keyword(2) PL spectrum
Keyword(3) temperature dependence
Keyword(4) alloy fluctuation
1st Author's Name Shunya Hakamata
1st Author's Affiliation Kanazawa Institute of Technology(KIT)
2nd Author's Name Takashi Fujita
2nd Author's Affiliation Kanazawa Institute of Technology(KIT)
3rd Author's Name Ryuichi Watanabe
3rd Author's Affiliation Kanazawa Institute of Technology(KIT)
4th Author's Name Atsushi A Yamaguchi
4th Author's Affiliation Kanazawa Institute of Technology(KIT)
Date 2021-11-25
Paper # ED2021-23,CPM2021-57,LQE2021-35
Volume (vol) vol.121
Number (no) ED-259,CPM-260,LQE-261
Page pp.pp.41-44(ED), pp.41-44(CPM), pp.41-44(LQE),
#Pages 4
Date of Issue 2021-11-18 (ED, CPM, LQE)