| Presentation | 2021-11-26 Fabrication of Recessed-gate AlGaInN/AlGaN HFETs utilizing a photo-electrochemical (PEC) etching. Kosaku Ito, Yuto Komatsu, Masachika Toguchi, Akiyoshi Inoue, Sakura Tanaka, Makoto Miyoshi, Taketomo Sato, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We utilized photo-electrochemical (PEC) etching for fabrication of recessed-gate AlGaInN/AlGaN MIS HFETs. The PEC reaction currents, corresponding to the etching rate, decreased with time and reached to 0, showing the self-stopping of the etching reaction. From the AFM measurement, the etching depth and RMS value of 5×5 ?m region was 13.2 nm and 1.89 nm, respectively, and good surface morphology was obtained. Furthermore, The MIS gate HFET formed with the recessed etching showed good pinch-off characteristics, and the threshold voltage shifted to around 0 V depending on the thickness of the barrier layer. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Nitride semiconductors / HFET / Recessed-gate / photo-electrochemical etching |
| Paper # | ED2021-35,CPM2021-69,LQE2021-47 |
| Date of Issue | 2021-11-18 (ED, CPM, LQE) |
| Conference Information | |
| Committee | ED / CPM / LQE |
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| Conference Date | 2021/11/25(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Online |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Hiroki Fujishiro(Tokyo Univ. of Science) / Yuichi Nakamura(Toyohashi Univ. of Tech.) / Toshitada Umezawa(NICT) |
| Vice Chair | Seiya Sakai(Hokkaido Univ.) / Hideki Nakazawa(Hirosaki Univ.) / Junichi Takahara(Osaka Univ.) |
| Secretary | Seiya Sakai(Fjitsu Lab.) / Hideki Nakazawa(NTT) / Junichi Takahara(Ehime Univ.) |
| Assistant | Ryota Isonoi(SCIOCS) / Yoshitugu Yamamoto(Mitsubishi Electric) / Yasuo Kimura(Tokyo Univ. of Tech.) / Fumihiko Hirose(Yamagata Univ.) / Noriko Bamba(Shinshu Univ.) / Shinsuke Tanaka(Fujitsu) / Nobuhiko Nishiyama(Tokyo Inst. of Tech.) |
| Paper Information | |
| Registration To | Technical Committee on Electron Devices / Technical Committee on Component Parts and Materials / Technical Committee on Lasers and Quantum Electronics |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication of Recessed-gate AlGaInN/AlGaN HFETs utilizing a photo-electrochemical (PEC) etching. |
| Sub Title (in English) | |
| Keyword(1) | Nitride semiconductors |
| Keyword(2) | HFET |
| Keyword(3) | Recessed-gate |
| Keyword(4) | photo-electrochemical etching |
| 1st Author's Name | Kosaku Ito |
| 1st Author's Affiliation | Research Center For Integrated Quantum Electronics, Hokkaido University(Hokkaido Univ.) |
| 2nd Author's Name | Yuto Komatsu |
| 2nd Author's Affiliation | Research Center For Integrated Quantum Electronics, Hokkaido University(Hokkaido Univ.) |
| 3rd Author's Name | Masachika Toguchi |
| 3rd Author's Affiliation | Research Center For Integrated Quantum Electronics, Hokkaido University(Hokkaido Univ.) |
| 4th Author's Name | Akiyoshi Inoue |
| 4th Author's Affiliation | Nagoya Institute of Technology(Nagoya Inst. of Tech) |
| 5th Author's Name | Sakura Tanaka |
| 5th Author's Affiliation | Nagoya Institute of Technology(Nagoya Inst. of Tech) |
| 6th Author's Name | Makoto Miyoshi |
| 6th Author's Affiliation | Nagoya Institute of Technology(Nagoya Inst. of Tech) |
| 7th Author's Name | Taketomo Sato |
| 7th Author's Affiliation | Research Center For Integrated Quantum Electronics, Hokkaido University(Hokkaido Univ.) |
| Date | 2021-11-26 |
| Paper # | ED2021-35,CPM2021-69,LQE2021-47 |
| Volume (vol) | vol.121 |
| Number (no) | ED-259,CPM-260,LQE-261 |
| Page | pp.pp.91-94(ED), pp.91-94(CPM), pp.91-94(LQE), |
| #Pages | 4 |
| Date of Issue | 2021-11-18 (ED, CPM, LQE) |