| Presentation | 2021-11-26 High-breakdown-voltage Al0.36Ga0.64N-channel HFETs with a dual AlN/AlGaInN barrier layer Akiyoshi Inoue, Sakura Tanaka, Takashi Egawa, Makoto Miyoshi, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In this study, we fabricated and characterized heterojunction field-effect transistors (HFETs) based on an Al0.36Ga0.64N-channel heterostructure with a dual AlN/AlGaInN barrier layer. The device fabrication was accomplished by adopting a regrown n++-GaN layer for ohmic contacts. The fabricated HFETs with a gate length of 2 μm and a gate-to-drain distance of 6 μm exhibited an on-state drain current density as high as approximately 270 mA/mm and an off-state breakdown voltage of approximately 1 kV, which corresponds to an off-state critical electric field of 166 V/μm. It was also confirmed that the devices adopting the dual AlN/AlGaInN barrier layer showed approximately one order of magnitude smaller gate leakage currents than those for devices without the top AlN barrier layer. From this, we understand that dual AlN/AlGaInN barrier layers are effective to suppress gate leakage currents and stabilize off-state characteristics for high-AlN-mole-fraction AlGaN-channel HFETs. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Group-III nitrides / AlGaN / HFET / GaN-channel HEMT / High breakdown voltage |
| Paper # | ED2021-32,CPM2021-66,LQE2021-44 |
| Date of Issue | 2021-11-18 (ED, CPM, LQE) |
| Conference Information | |
| Committee | ED / CPM / LQE |
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| Conference Date | 2021/11/25(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Online |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Hiroki Fujishiro(Tokyo Univ. of Science) / Yuichi Nakamura(Toyohashi Univ. of Tech.) / Toshitada Umezawa(NICT) |
| Vice Chair | Seiya Sakai(Hokkaido Univ.) / Hideki Nakazawa(Hirosaki Univ.) / Junichi Takahara(Osaka Univ.) |
| Secretary | Seiya Sakai(Fjitsu Lab.) / Hideki Nakazawa(NTT) / Junichi Takahara(Ehime Univ.) |
| Assistant | Ryota Isonoi(SCIOCS) / Yoshitugu Yamamoto(Mitsubishi Electric) / Yasuo Kimura(Tokyo Univ. of Tech.) / Fumihiko Hirose(Yamagata Univ.) / Noriko Bamba(Shinshu Univ.) / Shinsuke Tanaka(Fujitsu) / Nobuhiko Nishiyama(Tokyo Inst. of Tech.) |
| Paper Information | |
| Registration To | Technical Committee on Electron Devices / Technical Committee on Component Parts and Materials / Technical Committee on Lasers and Quantum Electronics |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | High-breakdown-voltage Al0.36Ga0.64N-channel HFETs with a dual AlN/AlGaInN barrier layer |
| Sub Title (in English) | |
| Keyword(1) | Group-III nitrides |
| Keyword(2) | AlGaN |
| Keyword(3) | HFET |
| Keyword(4) | GaN-channel HEMT |
| Keyword(5) | High breakdown voltage |
| 1st Author's Name | Akiyoshi Inoue |
| 1st Author's Affiliation | Nagoya Institute of Technology(NIT) |
| 2nd Author's Name | Sakura Tanaka |
| 2nd Author's Affiliation | Nagoya Institute of Technology(NIT) |
| 3rd Author's Name | Takashi Egawa |
| 3rd Author's Affiliation | Nagoya Institute of Technology(NIT) |
| 4th Author's Name | Makoto Miyoshi |
| 4th Author's Affiliation | Nagoya Institute of Technology(NIT) |
| Date | 2021-11-26 |
| Paper # | ED2021-32,CPM2021-66,LQE2021-44 |
| Volume (vol) | vol.121 |
| Number (no) | ED-259,CPM-260,LQE-261 |
| Page | pp.pp.79-82(ED), pp.79-82(CPM), pp.79-82(LQE), |
| #Pages | 4 |
| Date of Issue | 2021-11-18 (ED, CPM, LQE) |