| Presentation | 2021-11-25 Photoluminescence study of high-purity GaN homoepitaxial layers grown by hydride vapor phase epitaxy Hiroto Imashiro, Ryo Yamahida, Hironao Kanamori, Ryuichi Watanabe, Takeshi Kimura, Taichiro Konno, Hajime Fujikura, Atsushi A. Yamaguchi, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The fundamental material properties of GaN and its related materials have not been fully understood. One of the reasons for this is that perfect-quality crystal has not been fabricated. Recently, high-purity GaN homoepitaxial layers have successfully been grown by hydride vapor phase epitaxy (HVPE). In this study, we have performed photoluminescence (PL) studies in the temperature range of 2 K ~ 300 K to clarify the optical properties and carrier dynamics of the pure GaN crystal material itself. As a result, PL spectra with very sharp peaks have been obtained at 2 K. It is observed that the intensity ratio of free exciton (FX) emission to donor-bound exciton (DBE) emission in the low-temperature region, simply correlates with the donor concentration. On the other hand, in the high temperature region, the intensity ratio of the longitudinal optical (LO) phonon replica to the zero-phonon line correlates with concentration of impurity other than donor atom. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / PL / exciton / LO phonon replica |
| Paper # | ED2021-22,CPM2021-56,LQE2021-34 |
| Date of Issue | 2021-11-18 (ED, CPM, LQE) |
| Conference Information | |
| Committee | ED / CPM / LQE |
|---|---|
| Conference Date | 2021/11/25(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Online |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Hiroki Fujishiro(Tokyo Univ. of Science) / Yuichi Nakamura(Toyohashi Univ. of Tech.) / Toshitada Umezawa(NICT) |
| Vice Chair | Seiya Sakai(Hokkaido Univ.) / Hideki Nakazawa(Hirosaki Univ.) / Junichi Takahara(Osaka Univ.) |
| Secretary | Seiya Sakai(Fjitsu Lab.) / Hideki Nakazawa(NTT) / Junichi Takahara(Ehime Univ.) |
| Assistant | Ryota Isonoi(SCIOCS) / Yoshitugu Yamamoto(Mitsubishi Electric) / Yasuo Kimura(Tokyo Univ. of Tech.) / Fumihiko Hirose(Yamagata Univ.) / Noriko Bamba(Shinshu Univ.) / Shinsuke Tanaka(Fujitsu) / Nobuhiko Nishiyama(Tokyo Inst. of Tech.) |
| Paper Information | |
| Registration To | Technical Committee on Electron Devices / Technical Committee on Component Parts and Materials / Technical Committee on Lasers and Quantum Electronics |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Photoluminescence study of high-purity GaN homoepitaxial layers grown by hydride vapor phase epitaxy |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | PL |
| Keyword(3) | exciton |
| Keyword(4) | LO phonon replica |
| 1st Author's Name | Hiroto Imashiro |
| 1st Author's Affiliation | Kanazawa Institute of Technology(KIT) |
| 2nd Author's Name | Ryo Yamahida |
| 2nd Author's Affiliation | Kanazawa Institute of Technology(KIT) |
| 3rd Author's Name | Hironao Kanamori |
| 3rd Author's Affiliation | Kanazawa Institute of Technology(KIT) |
| 4th Author's Name | Ryuichi Watanabe |
| 4th Author's Affiliation | Kanazawa Institute of Technology(KIT) |
| 5th Author's Name | Takeshi Kimura |
| 5th Author's Affiliation | SCIOCS COMPANY LIMITED(SCIOCS) |
| 6th Author's Name | Taichiro Konno |
| 6th Author's Affiliation | SCIOCS COMPANY LIMITED(SCIOCS) |
| 7th Author's Name | Hajime Fujikura |
| 7th Author's Affiliation | SCIOCS COMPANY LIMITED(SCIOCS) |
| 8th Author's Name | Atsushi A. Yamaguchi |
| 8th Author's Affiliation | Kanazawa Institute of Technology(KIT) |
| Date | 2021-11-25 |
| Paper # | ED2021-22,CPM2021-56,LQE2021-34 |
| Volume (vol) | vol.121 |
| Number (no) | ED-259,CPM-260,LQE-261 |
| Page | pp.pp.37-40(ED), pp.37-40(CPM), pp.37-40(LQE), |
| #Pages | 4 |
| Date of Issue | 2021-11-18 (ED, CPM, LQE) |