Presentation | 2021-11-25 Photoluminescence study of high-purity GaN homoepitaxial layers grown by hydride vapor phase epitaxy Hiroto Imashiro, Ryo Yamahida, Hironao Kanamori, Ryuichi Watanabe, Takeshi Kimura, Taichiro Konno, Hajime Fujikura, Atsushi A. Yamaguchi, |
---|---|
PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | The fundamental material properties of GaN and its related materials have not been fully understood. One of the reasons for this is that perfect-quality crystal has not been fabricated. Recently, high-purity GaN homoepitaxial layers have successfully been grown by hydride vapor phase epitaxy (HVPE). In this study, we have performed photoluminescence (PL) studies in the temperature range of 2 K ~ 300 K to clarify the optical properties and carrier dynamics of the pure GaN crystal material itself. As a result, PL spectra with very sharp peaks have been obtained at 2 K. It is observed that the intensity ratio of free exciton (FX) emission to donor-bound exciton (DBE) emission in the low-temperature region, simply correlates with the donor concentration. On the other hand, in the high temperature region, the intensity ratio of the longitudinal optical (LO) phonon replica to the zero-phonon line correlates with concentration of impurity other than donor atom. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | GaN / PL / exciton / LO phonon replica |
Paper # | ED2021-22,CPM2021-56,LQE2021-34 |
Date of Issue | 2021-11-18 (ED, CPM, LQE) |
Conference Information | |
Committee | ED / CPM / LQE |
---|---|
Conference Date | 2021/11/25(2days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | Online |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | Hiroki Fujishiro(Tokyo Univ. of Science) / Yuichi Nakamura(Toyohashi Univ. of Tech.) / Toshitada Umezawa(NICT) |
Vice Chair | Seiya Sakai(Hokkaido Univ.) / Hideki Nakazawa(Hirosaki Univ.) / Junichi Takahara(Osaka Univ.) |
Secretary | Seiya Sakai(Fjitsu Lab.) / Hideki Nakazawa(NTT) / Junichi Takahara(Ehime Univ.) |
Assistant | Ryota Isonoi(SCIOCS) / Yoshitugu Yamamoto(Mitsubishi Electric) / Yasuo Kimura(Tokyo Univ. of Tech.) / Fumihiko Hirose(Yamagata Univ.) / Noriko Bamba(Shinshu Univ.) / Shinsuke Tanaka(Fujitsu) / Nobuhiko Nishiyama(Tokyo Inst. of Tech.) |
Paper Information | |
Registration To | Technical Committee on Electron Devices / Technical Committee on Component Parts and Materials / Technical Committee on Lasers and Quantum Electronics |
---|---|
Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Photoluminescence study of high-purity GaN homoepitaxial layers grown by hydride vapor phase epitaxy |
Sub Title (in English) | |
Keyword(1) | GaN |
Keyword(2) | PL |
Keyword(3) | exciton |
Keyword(4) | LO phonon replica |
1st Author's Name | Hiroto Imashiro |
1st Author's Affiliation | Kanazawa Institute of Technology(KIT) |
2nd Author's Name | Ryo Yamahida |
2nd Author's Affiliation | Kanazawa Institute of Technology(KIT) |
3rd Author's Name | Hironao Kanamori |
3rd Author's Affiliation | Kanazawa Institute of Technology(KIT) |
4th Author's Name | Ryuichi Watanabe |
4th Author's Affiliation | Kanazawa Institute of Technology(KIT) |
5th Author's Name | Takeshi Kimura |
5th Author's Affiliation | SCIOCS COMPANY LIMITED(SCIOCS) |
6th Author's Name | Taichiro Konno |
6th Author's Affiliation | SCIOCS COMPANY LIMITED(SCIOCS) |
7th Author's Name | Hajime Fujikura |
7th Author's Affiliation | SCIOCS COMPANY LIMITED(SCIOCS) |
8th Author's Name | Atsushi A. Yamaguchi |
8th Author's Affiliation | Kanazawa Institute of Technology(KIT) |
Date | 2021-11-25 |
Paper # | ED2021-22,CPM2021-56,LQE2021-34 |
Volume (vol) | vol.121 |
Number (no) | ED-259,CPM-260,LQE-261 |
Page | pp.pp.37-40(ED), pp.37-40(CPM), pp.37-40(LQE), |
#Pages | 4 |
Date of Issue | 2021-11-18 (ED, CPM, LQE) |