Presentation 2021-11-25
Waveguide loss measurements in III-nitride laser structures
Kenta Ogasawara, Shigeta Sakai, Tadashi Okumura, Koichi Naniwae, Atsushi A. Yamaguchi,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) InGaN is a semiconductor alloy material made of a mix of InN and GaN. InGaN can emit entire visible light by changing their alloy composition. On the other hand, it is well known that InGaN quantum well (QW) active layers have very large alloy compositional fluctuation and that density of states (DOS) has a tail with large localization energy due to the immiscibility of InN and GaN. Since optical gain characteristics are largely affected by these effects, it is very important to measure the waveguide loss of such fluctuated InGaN-QW. In this study, we have measured waveguide loss spectrum for an InGaN-QW laser diode (LD) structure. The loss spectrum for a conventional InGaP-QW red-light-emitting LD structure was also measured for comparison. It is observed that PL peak position difference between the surface and edge emissions is very large (~ 200 meV) in the InGaN LD sample while there is almost no difference in the InGaP LD sample. In addition, the absorption coefficient gradually rises from an energy much lower than the PL peak energy of surface emission in the InGaN LD sample while the coefficient sharply rises at nearly PL peak energy in the InGaP LD sample. These results show that the InGaN QW has a large waveguide loss.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) InGaN-QWs / Potential fluctuation / Laser / Optical characterization / Waveguide loss
Paper # ED2021-21,CPM2021-55,LQE2021-33
Date of Issue 2021-11-18 (ED, CPM, LQE)

Conference Information
Committee ED / CPM / LQE
Conference Date 2021/11/25(2days)
Place (in Japanese) (See Japanese page)
Place (in English) Online
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair Hiroki Fujishiro(Tokyo Univ. of Science) / Yuichi Nakamura(Toyohashi Univ. of Tech.) / Toshitada Umezawa(NICT)
Vice Chair Seiya Sakai(Hokkaido Univ.) / Hideki Nakazawa(Hirosaki Univ.) / Junichi Takahara(Osaka Univ.)
Secretary Seiya Sakai(Fjitsu Lab.) / Hideki Nakazawa(NTT) / Junichi Takahara(Ehime Univ.)
Assistant Ryota Isonoi(SCIOCS) / Yoshitugu Yamamoto(Mitsubishi Electric) / Yasuo Kimura(Tokyo Univ. of Tech.) / Fumihiko Hirose(Yamagata Univ.) / Noriko Bamba(Shinshu Univ.) / Shinsuke Tanaka(Fujitsu) / Nobuhiko Nishiyama(Tokyo Inst. of Tech.)

Paper Information
Registration To Technical Committee on Electron Devices / Technical Committee on Component Parts and Materials / Technical Committee on Lasers and Quantum Electronics
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Waveguide loss measurements in III-nitride laser structures
Sub Title (in English)
Keyword(1) InGaN-QWs
Keyword(2) Potential fluctuation
Keyword(3) Laser
Keyword(4) Optical characterization
Keyword(5) Waveguide loss
1st Author's Name Kenta Ogasawara
1st Author's Affiliation Kanazawa Institute of Technology(KIT)
2nd Author's Name Shigeta Sakai
2nd Author's Affiliation Ushio Incorporated(Ushio Inc)
3rd Author's Name Tadashi Okumura
3rd Author's Affiliation Ushio Incorporated(Ushio Inc)
4th Author's Name Koichi Naniwae
4th Author's Affiliation Ushio Incorporated(Ushio Inc)
5th Author's Name Atsushi A. Yamaguchi
5th Author's Affiliation Kanazawa Institute of Technology(KIT)
Date 2021-11-25
Paper # ED2021-21,CPM2021-55,LQE2021-33
Volume (vol) vol.121
Number (no) ED-259,CPM-260,LQE-261
Page pp.pp.33-36(ED), pp.33-36(CPM), pp.33-36(LQE),
#Pages 4
Date of Issue 2021-11-18 (ED, CPM, LQE)