Presentation 2021-12-10
A SAT and FALL Attacks Resistant Logic Locking Method at Register Transfer Level
Atsuya Tsujikawa, Toshinori Hosokawa, Masayoshi Yoshimura,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) In recent years, to meet strict time-to-market constraints, it has become difficult for only one semiconductor design company to design a VLSI. Thus, design companies purchase IP cores from third-party IP vendors and design only the necessary parts. On the other hand, since IP cores have the disadvantage that copyright infringement can be easily performed, logic locking has to applied to them. However, functional logic locking method using TTLock are resilient to SAT attack, however vulnerable to FALL attacks. Additionally, it is difficult to design logic locking based on TTLock at gate level. In this paper, we propose a logic locking method based on SAT attack and FALL attacks resistance at register transfer level.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Logic Locking / Register Transfer Level / TTLock / SAT Attack / FALL Attacks / Design for Security
Paper # DC2021-57
Date of Issue 2021-12-03 (DC)

Conference Information
Committee DC
Conference Date 2021/12/10(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair Hiroshi Takahashi(Ehime Univ.)
Vice Chair Tatsuhiro Tsuchiya(Osaka Univ.)
Secretary Tatsuhiro Tsuchiya(Nihon Univ.)
Assistant

Paper Information
Registration To Technical Committee on Dependable Computing
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A SAT and FALL Attacks Resistant Logic Locking Method at Register Transfer Level
Sub Title (in English)
Keyword(1) Logic Locking
Keyword(2) Register Transfer Level
Keyword(3) TTLock
Keyword(4) SAT Attack
Keyword(5) FALL Attacks
Keyword(6) Design for Security
1st Author's Name Atsuya Tsujikawa
1st Author's Affiliation Nihon University(Nihon Univ.)
2nd Author's Name Toshinori Hosokawa
2nd Author's Affiliation Nihon University(Nihon Univ.)
3rd Author's Name Masayoshi Yoshimura
3rd Author's Affiliation Kyoto Sangyo University(Kyoto Sangyo Univ.)
Date 2021-12-10
Paper # DC2021-57
Volume (vol) vol.121
Number (no) DC-293
Page pp.pp.13-18(DC),
#Pages 6
Date of Issue 2021-12-03 (DC)