| Presentation | 2021-11-26 Uniformity characterization of SiC, GaN, α-Ga?O? Schottky contacts using scanning internal photoemission microscopy Yuto Kawasumi, Fumimasa Horikiri, Noboru Fukuhara, Tomoyoshi Mishima, Takashi Shinohe, Kenji Shiojima, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Uniformity characterization of Ni/SiC, Ni/GaN, and Cu/Ti/$alpha$-Ga2O3 Schottky contacts was performed by scanning internal photoemission microscopy (SIPM). First, we performed SIPM measurement without scanning a laser beam to characterize stability of this measurement system, and revealed the energy resolution of Schottky barrier height (q$phi$B) was less than 0.2 meV. Then, SIPM measurement was performed by scanning a laser beam in the electrodes of three kinds of Schottky contacts. Standard deviations of q$phi$B were 0.84, 3.22, and 5.11 meV, respectively. These values were more than four times larger than that in the fix-pointed measurement. Therefore, we demonstrated that this measurement has sufficient accuracy to characterize the uniformity of these Schottky contacts. In addition, we found that these Schottky contacts exhibit a standard deviation of q$phi$B below 10 meV. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Schottky contacts / SiC / GaN / α-Ga2O3 / scanning internal photoemission microscopy |
| Paper # | ED2021-29,CPM2021-63,LQE2021-41 |
| Date of Issue | 2021-11-18 (ED, CPM, LQE) |
| Conference Information | |
| Committee | ED / CPM / LQE |
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| Conference Date | 2021/11/25(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Online |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Hiroki Fujishiro(Tokyo Univ. of Science) / Yuichi Nakamura(Toyohashi Univ. of Tech.) / Toshitada Umezawa(NICT) |
| Vice Chair | Seiya Sakai(Hokkaido Univ.) / Hideki Nakazawa(Hirosaki Univ.) / Junichi Takahara(Osaka Univ.) |
| Secretary | Seiya Sakai(Fjitsu Lab.) / Hideki Nakazawa(NTT) / Junichi Takahara(Ehime Univ.) |
| Assistant | Ryota Isonoi(SCIOCS) / Yoshitugu Yamamoto(Mitsubishi Electric) / Yasuo Kimura(Tokyo Univ. of Tech.) / Fumihiko Hirose(Yamagata Univ.) / Noriko Bamba(Shinshu Univ.) / Shinsuke Tanaka(Fujitsu) / Nobuhiko Nishiyama(Tokyo Inst. of Tech.) |
| Paper Information | |
| Registration To | Technical Committee on Electron Devices / Technical Committee on Component Parts and Materials / Technical Committee on Lasers and Quantum Electronics |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Uniformity characterization of SiC, GaN, α-Ga?O? Schottky contacts using scanning internal photoemission microscopy |
| Sub Title (in English) | |
| Keyword(1) | Schottky contacts |
| Keyword(2) | SiC |
| Keyword(3) | GaN |
| Keyword(4) | α-Ga2O3 |
| Keyword(5) | scanning internal photoemission microscopy |
| 1st Author's Name | Yuto Kawasumi |
| 1st Author's Affiliation | University of Fukui(Univ. of Fukui) |
| 2nd Author's Name | Fumimasa Horikiri |
| 2nd Author's Affiliation | SCIOCS Co.(SCIOCS Co.) |
| 3rd Author's Name | Noboru Fukuhara |
| 3rd Author's Affiliation | SCIOCS Co.(SCIOCS Co.) |
| 4th Author's Name | Tomoyoshi Mishima |
| 4th Author's Affiliation | Hosei University(Hosei Univ.) |
| 5th Author's Name | Takashi Shinohe |
| 5th Author's Affiliation | FLOSFIA INC.(FLOSFIA INC.) |
| 6th Author's Name | Kenji Shiojima |
| 6th Author's Affiliation | University of Fukui(Univ. of Fukui) |
| Date | 2021-11-26 |
| Paper # | ED2021-29,CPM2021-63,LQE2021-41 |
| Volume (vol) | vol.121 |
| Number (no) | ED-259,CPM-260,LQE-261 |
| Page | pp.pp.67-70(ED), pp.67-70(CPM), pp.67-70(LQE), |
| #Pages | 4 |
| Date of Issue | 2021-11-18 (ED, CPM, LQE) |