| Presentation | 2021-11-26 Two-dimensional characterization of Au/Ni/n-GaN Schottky contacts with different surface treatments by scanning internal photoemission microscopy Kenji Shiojima, Ryo Tanaka, Shinya Takashima, Katsunori Ueno, Edo Masaharu, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We report the basic electrical characteristics and uniformity of 25 Au/Ni Schottky barrier diodes (SBDs) with three different surface treatments ((I) no treatment (as-grown), (II) alkaline solution, and (III) HCl related solution). The SBDs with (II) showed small diode-to-diode variation in the Schottky barrier height and the ideality factor, and good uniformity over the electrode. In addition, after post-metallization annealing at 400 °C, the reverse biased current significantly reduced to the prediction by the thermionic field emission model. The similar characteristics were obtained for the SBDs with (I), however the uniformity over the electrode became worse after the annealing. For the SBDs with (III), the diode-to-diode variation was originally large, and the reverse biased current did not significantly reduce. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Schottky contacts / GaN / surface treatment / post-metallization annealing / scanning internal photoemission microscopy |
| Paper # | ED2021-28,CPM2021-62,LQE2021-40 |
| Date of Issue | 2021-11-18 (ED, CPM, LQE) |
| Conference Information | |
| Committee | ED / CPM / LQE |
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| Conference Date | 2021/11/25(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Online |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Hiroki Fujishiro(Tokyo Univ. of Science) / Yuichi Nakamura(Toyohashi Univ. of Tech.) / Toshitada Umezawa(NICT) |
| Vice Chair | Seiya Sakai(Hokkaido Univ.) / Hideki Nakazawa(Hirosaki Univ.) / Junichi Takahara(Osaka Univ.) |
| Secretary | Seiya Sakai(Fjitsu Lab.) / Hideki Nakazawa(NTT) / Junichi Takahara(Ehime Univ.) |
| Assistant | Ryota Isonoi(SCIOCS) / Yoshitugu Yamamoto(Mitsubishi Electric) / Yasuo Kimura(Tokyo Univ. of Tech.) / Fumihiko Hirose(Yamagata Univ.) / Noriko Bamba(Shinshu Univ.) / Shinsuke Tanaka(Fujitsu) / Nobuhiko Nishiyama(Tokyo Inst. of Tech.) |
| Paper Information | |
| Registration To | Technical Committee on Electron Devices / Technical Committee on Component Parts and Materials / Technical Committee on Lasers and Quantum Electronics |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Two-dimensional characterization of Au/Ni/n-GaN Schottky contacts with different surface treatments by scanning internal photoemission microscopy |
| Sub Title (in English) | |
| Keyword(1) | Schottky contacts |
| Keyword(2) | GaN |
| Keyword(3) | surface treatment |
| Keyword(4) | post-metallization annealing |
| Keyword(5) | scanning internal photoemission microscopy |
| 1st Author's Name | Kenji Shiojima |
| 1st Author's Affiliation | University of Fukui(Univ. of Fukui) |
| 2nd Author's Name | Ryo Tanaka |
| 2nd Author's Affiliation | Fuji electric corporation(Fuji electric co.) |
| 3rd Author's Name | Shinya Takashima |
| 3rd Author's Affiliation | Fuji electric corporation(Fuji electric co.) |
| 4th Author's Name | Katsunori Ueno |
| 4th Author's Affiliation | Fuji electric corporation(Fuji electric co.) |
| 5th Author's Name | Edo Masaharu |
| 5th Author's Affiliation | Fuji electric corporation(Fuji electric co.) |
| Date | 2021-11-26 |
| Paper # | ED2021-28,CPM2021-62,LQE2021-40 |
| Volume (vol) | vol.121 |
| Number (no) | ED-259,CPM-260,LQE-261 |
| Page | pp.pp.63-66(ED), pp.63-66(CPM), pp.63-66(LQE), |
| #Pages | 4 |
| Date of Issue | 2021-11-18 (ED, CPM, LQE) |