Presentation 2021-11-11
[Invited Talk] SISPAD2021 Review
Hideki Minari,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) 2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) was held on September 27-29, 2021 in a hybrid format (online + on-site (Dallas, USA)). In this report, the trend of statistical data of this conference is reported. I also review the selected papers presented at the conference.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) SISPAD / modeling / simulation
Paper # SDM2021-59
Date of Issue 2021-11-04 (SDM)

Conference Information
Committee SDM
Conference Date 2021/11/11(2days)
Place (in Japanese) (See Japanese page)
Place (in English) Online
Topics (in Japanese) (See Japanese page)
Topics (in English) Process, Device, Circuit simulation, etc.
Chair Hiroshige Hirano(TowerPartners Semiconductor)
Vice Chair Shunichiro Ohmi(Tokyo Inst. of Tech.)
Secretary Shunichiro Ohmi(AIST)
Assistant Taiji Noda(Panasonic) / Tomoyuki Suwa(Tohoku Univ.)

Paper Information
Registration To Technical Committee on Silicon Device and Materials
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) [Invited Talk] SISPAD2021 Review
Sub Title (in English)
Keyword(1) SISPAD
Keyword(2) modeling
Keyword(3) simulation
1st Author's Name Hideki Minari
1st Author's Affiliation Sony Semiconductor Solutions Corporation(Sony Semiconductor Solutions)
Date 2021-11-11
Paper # SDM2021-59
Volume (vol) vol.121
Number (no) SDM-235
Page pp.pp.33-37(SDM),
#Pages 5
Date of Issue 2021-11-04 (SDM)