Presentation 2021-10-21
Statistical analysis of RTN behavior on transistor structure, operating region, and carrier transport direction
Ryo Akimoto, Rihito Kuroda, Takezo Mawaki, Shigotoshi Sugawa,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English)
Keyword(in Japanese) (See Japanese page)
Keyword(in English)
Paper # SDM2021-52
Date of Issue 2021-10-14 (SDM)

Conference Information
Committee SDM
Conference Date 2021/10/21(1days)
Place (in Japanese) (See Japanese page)
Place (in English) Online
Topics (in Japanese) (See Japanese page)
Topics (in English) Process Science and New Process Technology
Chair Hiroshige Hirano(TowerPartners Semiconductor)
Vice Chair Shunichiro Ohmi(Tokyo Inst. of Tech.)
Secretary Shunichiro Ohmi(AIST)
Assistant Taiji Noda(Panasonic) / Tomoyuki Suwa(Tohoku Univ.)

Paper Information
Registration To Technical Committee on Silicon Device and Materials
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Statistical analysis of RTN behavior on transistor structure, operating region, and carrier transport direction
Sub Title (in English)
Keyword(1)
1st Author's Name Ryo Akimoto
1st Author's Affiliation Tohoku University(Tohoku Univ.)
2nd Author's Name Rihito Kuroda
2nd Author's Affiliation Tohoku University(Tohoku Univ.)
3rd Author's Name Takezo Mawaki
3rd Author's Affiliation Tohoku University(Tohoku Univ.)
4th Author's Name Shigotoshi Sugawa
4th Author's Affiliation Tohoku University(Tohoku Univ.)
Date 2021-10-21
Paper # SDM2021-52
Volume (vol) vol.121
Number (no) SDM-212
Page pp.pp.27-32(SDM),
#Pages 6
Date of Issue 2021-10-14 (SDM)