| Presentation | 2021-10-21 A study on Ar/N2-plasma sputtering gas pressure dependence on the LaBxNy insulator formation for non-volatile memory applications Eun-Ki Hong, Shun-ichiro Ohmi, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In this study, we investigated Ar/N2-plasma sputtering gas pressure dependence on the LaBxNy insulator formation. The floating-gate memory with N-doped LaB6/LaBxNy stacked layer was examined for top-gate type Si device and back-gate type organic semiconductor device. The sputtering gas pressure was changed from 0.19 Pa to 0.47 Pa by changing the Ar/N2 gas flow ratio from 4/2.8 sccm to 10/7 sccm for LaBxNy deposition. In the case of MIMIS diode for top-gate type Si device at sputtering gas pressure of 0.19 Pa, larger memory window (MW) of 0.56 V was obtained with higher relative dielectric constant (εr) of 19.5 due to the improvement of film quality compared to sputtering gas pressure of 0.47 Pa which indicated the MW of 0.4 V and εr of 17.2, respectively. The pentacene-based floating-gate back-gate type organic field-effect transistor (OFET) was fabricated with α-rubrene passivation layer. In the case of sputtering gas pressure of 0.19 Pa, larger MW of 0.68 V was obtained with saturation mobility of 2.2×10-2 cm2/(V?s) and subthreshold swing of 199 mV/dec. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | N-doped LaB6LaBxNyFloating-gate memoryRF sputteringOrganic semiconductor |
| Paper # | SDM2021-46 |
| Date of Issue | 2021-10-14 (SDM) |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 2021/10/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Online |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Process Science and New Process Technology |
| Chair | Hiroshige Hirano(TowerPartners Semiconductor) |
| Vice Chair | Shunichiro Ohmi(Tokyo Inst. of Tech.) |
| Secretary | Shunichiro Ohmi(AIST) |
| Assistant | Taiji Noda(Panasonic) / Tomoyuki Suwa(Tohoku Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A study on Ar/N2-plasma sputtering gas pressure dependence on the LaBxNy insulator formation for non-volatile memory applications |
| Sub Title (in English) | |
| Keyword(1) | N-doped LaB6LaBxNyFloating-gate memoryRF sputteringOrganic semiconductor |
| 1st Author's Name | Eun-Ki Hong |
| 1st Author's Affiliation | Tokyo Institute of Technology(Tokyo Tech.) |
| 2nd Author's Name | Shun-ichiro Ohmi |
| 2nd Author's Affiliation | Tokyo Institute of Technology(Tokyo Tech.) |
| Date | 2021-10-21 |
| Paper # | SDM2021-46 |
| Volume (vol) | vol.121 |
| Number (no) | SDM-212 |
| Page | pp.pp.8-11(SDM), |
| #Pages | 4 |
| Date of Issue | 2021-10-14 (SDM) |