Presentation 2021-10-27
Evaluation of memristors based on encapsulated ZnO
Tomoki Kinoshita, Myo Than Htay, Yoshio Hashimoto,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) In order to improve the reproducibility of memristors, a novel device structure composed of encapsulated ZnO in porous alumina, which behaves as the resistance changing medium, is proposed. Porous alumina was prepared by anodic oxidation method. By encapsulating ZnO in the porous alumina, improvement in ON-OFF resistance ratio and enhancement of retention time are achieved although lager operation voltage is necessary compared to the conventional structure.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Memristor / Porous alumina / Zinc Oxide
Paper # CPM2021-32
Date of Issue 2021-10-20 (CPM)

Conference Information
Committee CPM
Conference Date 2021/10/27(1days)
Place (in Japanese) (See Japanese page)
Place (in English) Online
Topics (in Japanese) (See Japanese page)
Topics (in English) Functional materials (semiconductors, magnetic materials, dielectrics, transparent conductors / semiconductors, etc.) thin film processes / materials / devices, etc.
Chair Yuichi Nakamura(Toyohashi Univ. of Tech.)
Vice Chair Hideki Nakazawa(Hirosaki Univ.)
Secretary Hideki Nakazawa(Ehime Univ.)
Assistant Yasuo Kimura(Tokyo Univ. of Tech.) / Fumihiko Hirose(Yamagata Univ.) / Noriko Bamba(Shinshu Univ.)

Paper Information
Registration To Technical Committee on Component Parts and Materials
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Evaluation of memristors based on encapsulated ZnO
Sub Title (in English)
Keyword(1) Memristor
Keyword(2) Porous alumina
Keyword(3) Zinc Oxide
1st Author's Name Tomoki Kinoshita
1st Author's Affiliation Shinshu University(Shinshu Univ)
2nd Author's Name Myo Than Htay
2nd Author's Affiliation Shinshu University(Shinshu Univ)
3rd Author's Name Yoshio Hashimoto
3rd Author's Affiliation Shinshu University(Shinshu Univ)
Date 2021-10-27
Paper # CPM2021-32
Volume (vol) vol.121
Number (no) CPM-220
Page pp.pp.46-50(CPM),
#Pages 5
Date of Issue 2021-10-20 (CPM)