Presentation 2021-08-18
[Invited Talk] Voltage-sensing FeFET CiM with MAC by Source-follower Read and Charge-sharing
Chihiro Matsui, Kasidit Toprasertpong, Shinichi Takagi, Ken Takeuchi,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) An energy-efficient and high-throughput HZO FeFET Computation-in-Memory (CiM) is proposed. The FeFET CiM performs voltage-sensing multiply-accumulate (MAC) operation using source-follower read locally to multiply the input of neural network and weights stored in FeFETs, and charge-sharing globally to sum the multiplied values in the bit-line direction. The proposed FeFET CiM is not affected by read-disturb and achieves 3 bit/cell operation after 10 years of data-retention. The FeFET CiM achieves high-throughput 66 TOPS/W, which is 64 times higher than the conventional current-sensing CiM.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) FeFET / Computation-in-Memory / source-follower read / charge-sharing
Paper # SDM2021-37,ICD2021-8
Date of Issue 2021-08-10 (SDM, ICD)

Conference Information
Committee SDM / ICD / ITE-IST
Conference Date 2021/8/17(2days)
Place (in Japanese) (See Japanese page)
Place (in English) Online
Topics (in Japanese) (See Japanese page)
Topics (in English) Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low Voltage/Low Power Techniques, Novel Devices/Circuits, and the Applications
Chair Hiroshige Hirano(TowerPartners Semiconductor) / Masafumi Takahashi(Kioxia) / AKITA Junichi(Kanazawa Univ.)
Vice Chair Shunichiro Ohmi(Tokyo Inst. of Tech.) / Makoto Ikeda(Univ. of Tokyo) / IKEBE Masayuki(Hokkaido Univ.) / HIROSE Yutaka(Panasonic)
Secretary Shunichiro Ohmi(AIST) / Makoto Ikeda(Nihon Univ.) / IKEBE Masayuki(Osaka Univ.) / HIROSE Yutaka(TSMC)
Assistant Taiji Noda(Panasonic) / Tomoyuki Suwa(Tohoku Univ.) / Kosuke Miyaji(Shinshu Univ.) / Yoshiaki Yoshihara(キオクシア) / Takeshi Kuboki(Kyushu Univ.) / KOMURO Takashi(Saitama Univ.) / SHIMONOMURA Kazuhiro(Ritsumeikan Univ.) / KAGAWA Keiichiro(Shizuoka Univ.) / TOKUDA Takashi(TITech) / KURODA Rihito(Tohoku Univ.) / HUNAZU Ryohei(NHK) / YAMASHITA Yuichiro(TSMC)

Paper Information
Registration To Technical Committee on Silicon Device and Materials / Technical Committee on Integrated Circuits and Devices / Technical Group on Information Sensing Technologies
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) [Invited Talk] Voltage-sensing FeFET CiM with MAC by Source-follower Read and Charge-sharing
Sub Title (in English)
Keyword(1) FeFET
Keyword(2) Computation-in-Memory
Keyword(3) source-follower read
Keyword(4) charge-sharing
1st Author's Name Chihiro Matsui
1st Author's Affiliation The University of Tokyo(Univ. Tokyo)
2nd Author's Name Kasidit Toprasertpong
2nd Author's Affiliation The University of Tokyo(Univ. Tokyo)
3rd Author's Name Shinichi Takagi
3rd Author's Affiliation The University of Tokyo(Univ. Tokyo)
4th Author's Name Ken Takeuchi
4th Author's Affiliation The University of Tokyo(Univ. Tokyo)
Date 2021-08-18
Paper # SDM2021-37,ICD2021-8
Volume (vol) vol.121
Number (no) SDM-138,ICD-139
Page pp.pp.38-41(SDM), pp.38-41(ICD),
#Pages 4
Date of Issue 2021-08-10 (SDM, ICD)