| Presentation | 2021-06-22 [Invited Lecture] FET characteristics with 2D channel Hitoshi Wakabayashi, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | |
| Paper # | SDM2021-24 |
| Date of Issue | 2021-06-15 (SDM) |
| Conference Information | |
| Committee | SDM |
|---|---|
| Conference Date | 2021/6/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Online Virtual Meeting |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Material Science and Process Technology for MOS Devices and Memories |
| Chair | Hiroshige Hirano(TowerPartners Semiconductor) |
| Vice Chair | Shunichiro Ohmi(Tokyo Inst. of Tech.) |
| Secretary | Shunichiro Ohmi(AIST) |
| Assistant | Taiji Noda(Panasonic) / Tomoyuki Suwa(Tohoku Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | [Invited Lecture] FET characteristics with 2D channel |
| Sub Title (in English) | |
| Keyword(1) | |
| 1st Author's Name | Hitoshi Wakabayashi |
| 1st Author's Affiliation | Tokyo Institute of Technology(Tokyo Tech) |
| Date | 2021-06-22 |
| Paper # | SDM2021-24 |
| Volume (vol) | vol.121 |
| Number (no) | SDM-71 |
| Page | pp.pp.13-15(SDM), |
| #Pages | 3 |
| Date of Issue | 2021-06-15 (SDM) |