| Presentation | 2021-05-27 Evaluation of I-V Characteristics of Zr/ZrOx/Pt Structure for Resistive Random Access Memory Yuki Kawai, Masaru Sato, Mayumi B. Takeyama, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Resistive random access memory is attracting attention as the next generation non-volatile memory. However, there are various issues such as increased operating voltage, and current, and high power consumption due to the forming process. In this study, we prepared the Zr/ZrOx/Pt structure using ZrOx films with different film thickness and examined I-V characteristics of Zr/ZrOx/Pt structure. As a result, we can obtain forming free RRAM device using Zr/ZrOx/Pt structure with 10 nm thick ZrOx film. Also, both low operating voltage (< 5 V) and the low operating current (< 100 nA) are demonstrated in Zr/ZrOx/Pt structures. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Resistive random access memory / non-volatile memories / Forming process / ZrOx film |
| Paper # | ED2021-3,CPM2021-3,SDM2021-14 |
| Date of Issue | 2021-05-20 (ED, CPM, SDM) |
| Conference Information | |
| Committee | ED / SDM / CPM |
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| Conference Date | 2021/5/27(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Online |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Michihiko Suhara(TMU) / Hiroshige Hirano(TowerPartners Semiconductor) / Mayumi Takeyama(Kitami Inst. of Tech.) |
| Vice Chair | Hiroki Fujishiro(Tokyo Univ. of Science) / Shunichiro Ohmi(Tokyo Inst. of Tech.) / Yuichi Nakamura(Toyohashi Univ. of Tech.) |
| Secretary | Hiroki Fujishiro(Toyama Pref. Univ.) / Shunichiro Ohmi(Fjitsu Lab.) / Yuichi Nakamura(AIST) |
| Assistant | Takuya Tsutsumi(NTT) / Taiji Noda(Panasonic) / Tomoyuki Suwa(Tohoku Univ.) / Yasuo Kimura(Tokyo Univ. of Tech.) / Tomoaki Terasako(Ehime Univ.) / Fumihiko Hirose(Yamagata Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Electron Devices / Technical Committee on Silicon Device and Materials / Technical Committee on Component Parts and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Evaluation of I-V Characteristics of Zr/ZrOx/Pt Structure for Resistive Random Access Memory |
| Sub Title (in English) | |
| Keyword(1) | Resistive random access memory |
| Keyword(2) | non-volatile memories |
| Keyword(3) | Forming process |
| Keyword(4) | ZrOx film |
| 1st Author's Name | Yuki Kawai |
| 1st Author's Affiliation | Kitami Institute of Technology(Kitami Inst. of Tech.) |
| 2nd Author's Name | Masaru Sato |
| 2nd Author's Affiliation | Kitami Institute of Technology(Kitami Inst. of Tech.) |
| 3rd Author's Name | Mayumi B. Takeyama |
| 3rd Author's Affiliation | Kitami Institute of Technology(Kitami Inst. of Tech.) |
| Date | 2021-05-27 |
| Paper # | ED2021-3,CPM2021-3,SDM2021-14 |
| Volume (vol) | vol.121 |
| Number (no) | ED-44,CPM-45,SDM-46 |
| Page | pp.pp.11-14(ED), pp.11-14(CPM), pp.11-14(SDM), |
| #Pages | 4 |
| Date of Issue | 2021-05-20 (ED, CPM, SDM) |