| Presentation | 2021-05-27 Bandgap control for Ge epitaxial layer on Si using sub-micron wire structure Manami Shimokawa, Shuhei Sonoi, Riku Katamawari, Yasuhiko Ishikawa, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Ge epitaxial layer on Si has been used in silicon photonics as a material for photodetectors and optical intensity modulators operating in the optical communication wavelengths. A tensile lattice strain as large as 0.2% is generated in Ge because of the difference in the thermal expansion coefficient between the Ge layer and Si substrate. The strain induces a narrowing of direct bandgap for Ge from 0.80 eV to 0.77 eV, extending the fundamental optical absorption edge from 1.55 ?m to 1.61 ?m in wavelength. This property is effective to realize photodetectors with a high efficiency at 1.55 ?m, while the optical intensity modulators operate at around 1.61 ?m. For the modulator operation at 1.55 ?m, a bandgap widening is necessary. In order to increase the bandgap, a method is demonstrated utilizing sub-micron-wide wire structures. Effects of SiNx stressor deposited on Ge are also reported. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Si photonics / Ge photonic devices / lattice strain / optical absorption / wire structure |
| Paper # | ED2021-2,CPM2021-2,SDM2021-13 |
| Date of Issue | 2021-05-20 (ED, CPM, SDM) |
| Conference Information | |
| Committee | ED / SDM / CPM |
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| Conference Date | 2021/5/27(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Online |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Michihiko Suhara(TMU) / Hiroshige Hirano(TowerPartners Semiconductor) / Mayumi Takeyama(Kitami Inst. of Tech.) |
| Vice Chair | Hiroki Fujishiro(Tokyo Univ. of Science) / Shunichiro Ohmi(Tokyo Inst. of Tech.) / Yuichi Nakamura(Toyohashi Univ. of Tech.) |
| Secretary | Hiroki Fujishiro(Toyama Pref. Univ.) / Shunichiro Ohmi(Fjitsu Lab.) / Yuichi Nakamura(AIST) |
| Assistant | Takuya Tsutsumi(NTT) / Taiji Noda(Panasonic) / Tomoyuki Suwa(Tohoku Univ.) / Yasuo Kimura(Tokyo Univ. of Tech.) / Tomoaki Terasako(Ehime Univ.) / Fumihiko Hirose(Yamagata Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Electron Devices / Technical Committee on Silicon Device and Materials / Technical Committee on Component Parts and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Bandgap control for Ge epitaxial layer on Si using sub-micron wire structure |
| Sub Title (in English) | |
| Keyword(1) | Si photonics |
| Keyword(2) | Ge photonic devices |
| Keyword(3) | lattice strain |
| Keyword(4) | optical absorption |
| Keyword(5) | wire structure |
| 1st Author's Name | Manami Shimokawa |
| 1st Author's Affiliation | Toyohashi University of Technology(TUT) |
| 2nd Author's Name | Shuhei Sonoi |
| 2nd Author's Affiliation | Toyohashi University of Technology(TUT) |
| 3rd Author's Name | Riku Katamawari |
| 3rd Author's Affiliation | Toyohashi University of Technology(TUT) |
| 4th Author's Name | Yasuhiko Ishikawa |
| 4th Author's Affiliation | Toyohashi University of Technology(TUT) |
| Date | 2021-05-27 |
| Paper # | ED2021-2,CPM2021-2,SDM2021-13 |
| Volume (vol) | vol.121 |
| Number (no) | ED-44,CPM-45,SDM-46 |
| Page | pp.pp.7-10(ED), pp.7-10(CPM), pp.7-10(SDM), |
| #Pages | 4 |
| Date of Issue | 2021-05-20 (ED, CPM, SDM) |