Presentation | 2021-05-27 Fabrication and Evaluation of Single-Electron Devices Formed by Single-Layered Fe Nanodot Array Takayuki Gyakushi, Yuki Asai, Beommo Byun, Ikuma Amano, Atsushi Tsurumaki-Fukuchi, Masashi Arita, Yasuo Takahashi, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Recently, novel information processing techniques using nanoscale devices, such as neural networks and reconfigurable computing, have attracted attention. Single-electron devices (SEDs) are expected to be one of the candidates to realize these techniques due to their high functionality and ultra-low-power consumption. Multi-dot SEDs, which consist of many dots, are expected to operate functionally by attaching multiple gates. One relatively easy method to fabricate multi-dot SEDs is using self-assembled nanodot arrays, which are formed in the early stage of metal thin-film growth. In this study, double-gate SEDs comprising a single-layer Fe nanodot array were fabricated, and explored with respect to the electrical characteristics. Although more than hundreds of nanodots present between the source and drain electrodes, clear current oscillations originating from the single-electron effect of a single dot were observed. Furthermore, it was clarified that the charge state of a single dot could be controlled by using two gates, and the gate-capacitance ratio between the dots and the upper and the lower gates varied depending on the three-dimensional structure of the dots. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Single-Electron Device / Self-Assembled Nanodot Array / Coulomb Blockade Oscillation / Single-Electron Effect |
Paper # | ED2021-6,CPM2021-6,SDM2021-17 |
Date of Issue | 2021-05-20 (ED, CPM, SDM) |
Conference Information | |
Committee | ED / SDM / CPM |
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Conference Date | 2021/5/27(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | Online |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | Michihiko Suhara(TMU) / Hiroshige Hirano(TowerPartners Semiconductor) / Mayumi Takeyama(Kitami Inst. of Tech.) |
Vice Chair | Hiroki Fujishiro(Tokyo Univ. of Science) / Shunichiro Ohmi(Tokyo Inst. of Tech.) / Yuichi Nakamura(Toyohashi Univ. of Tech.) |
Secretary | Hiroki Fujishiro(Toyama Pref. Univ.) / Shunichiro Ohmi(Fjitsu Lab.) / Yuichi Nakamura(AIST) |
Assistant | Takuya Tsutsumi(NTT) / Taiji Noda(Panasonic) / Tomoyuki Suwa(Tohoku Univ.) / Yasuo Kimura(Tokyo Univ. of Tech.) / Tomoaki Terasako(Ehime Univ.) / Fumihiko Hirose(Yamagata Univ.) |
Paper Information | |
Registration To | Technical Committee on Electron Devices / Technical Committee on Silicon Device and Materials / Technical Committee on Component Parts and Materials |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Fabrication and Evaluation of Single-Electron Devices Formed by Single-Layered Fe Nanodot Array |
Sub Title (in English) | |
Keyword(1) | Single-Electron Device |
Keyword(2) | Self-Assembled Nanodot Array |
Keyword(3) | Coulomb Blockade Oscillation |
Keyword(4) | Single-Electron Effect |
1st Author's Name | Takayuki Gyakushi |
1st Author's Affiliation | Hokkaido University(Hokkaido Univ.) |
2nd Author's Name | Yuki Asai |
2nd Author's Affiliation | Hokkaido University(Hokkaido Univ.) |
3rd Author's Name | Beommo Byun |
3rd Author's Affiliation | Hokkaido University(Hokkaido Univ.) |
4th Author's Name | Ikuma Amano |
4th Author's Affiliation | Hokkaido University(Hokkaido Univ.) |
5th Author's Name | Atsushi Tsurumaki-Fukuchi |
5th Author's Affiliation | Hokkaido University(Hokkaido Univ.) |
6th Author's Name | Masashi Arita |
6th Author's Affiliation | Hokkaido University(Hokkaido Univ.) |
7th Author's Name | Yasuo Takahashi |
7th Author's Affiliation | Hokkaido University(Hokkaido Univ.) |
Date | 2021-05-27 |
Paper # | ED2021-6,CPM2021-6,SDM2021-17 |
Volume (vol) | vol.121 |
Number (no) | ED-44,CPM-45,SDM-46 |
Page | pp.pp.23-26(ED), pp.23-26(CPM), pp.23-26(SDM), |
#Pages | 4 |
Date of Issue | 2021-05-20 (ED, CPM, SDM) |