Presentation 2021-05-27
Fabrication and Evaluation of Single-Electron Devices Formed by Single-Layered Fe Nanodot Array
Takayuki Gyakushi, Yuki Asai, Beommo Byun, Ikuma Amano, Atsushi Tsurumaki-Fukuchi, Masashi Arita, Yasuo Takahashi,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Recently, novel information processing techniques using nanoscale devices, such as neural networks and reconfigurable computing, have attracted attention. Single-electron devices (SEDs) are expected to be one of the candidates to realize these techniques due to their high functionality and ultra-low-power consumption. Multi-dot SEDs, which consist of many dots, are expected to operate functionally by attaching multiple gates. One relatively easy method to fabricate multi-dot SEDs is using self-assembled nanodot arrays, which are formed in the early stage of metal thin-film growth. In this study, double-gate SEDs comprising a single-layer Fe nanodot array were fabricated, and explored with respect to the electrical characteristics. Although more than hundreds of nanodots present between the source and drain electrodes, clear current oscillations originating from the single-electron effect of a single dot were observed. Furthermore, it was clarified that the charge state of a single dot could be controlled by using two gates, and the gate-capacitance ratio between the dots and the upper and the lower gates varied depending on the three-dimensional structure of the dots.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Single-Electron Device / Self-Assembled Nanodot Array / Coulomb Blockade Oscillation / Single-Electron Effect
Paper # ED2021-6,CPM2021-6,SDM2021-17
Date of Issue 2021-05-20 (ED, CPM, SDM)

Conference Information
Committee ED / SDM / CPM
Conference Date 2021/5/27(1days)
Place (in Japanese) (See Japanese page)
Place (in English) Online
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair Michihiko Suhara(TMU) / Hiroshige Hirano(TowerPartners Semiconductor) / Mayumi Takeyama(Kitami Inst. of Tech.)
Vice Chair Hiroki Fujishiro(Tokyo Univ. of Science) / Shunichiro Ohmi(Tokyo Inst. of Tech.) / Yuichi Nakamura(Toyohashi Univ. of Tech.)
Secretary Hiroki Fujishiro(Toyama Pref. Univ.) / Shunichiro Ohmi(Fjitsu Lab.) / Yuichi Nakamura(AIST)
Assistant Takuya Tsutsumi(NTT) / Taiji Noda(Panasonic) / Tomoyuki Suwa(Tohoku Univ.) / Yasuo Kimura(Tokyo Univ. of Tech.) / Tomoaki Terasako(Ehime Univ.) / Fumihiko Hirose(Yamagata Univ.)

Paper Information
Registration To Technical Committee on Electron Devices / Technical Committee on Silicon Device and Materials / Technical Committee on Component Parts and Materials
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Fabrication and Evaluation of Single-Electron Devices Formed by Single-Layered Fe Nanodot Array
Sub Title (in English)
Keyword(1) Single-Electron Device
Keyword(2) Self-Assembled Nanodot Array
Keyword(3) Coulomb Blockade Oscillation
Keyword(4) Single-Electron Effect
1st Author's Name Takayuki Gyakushi
1st Author's Affiliation Hokkaido University(Hokkaido Univ.)
2nd Author's Name Yuki Asai
2nd Author's Affiliation Hokkaido University(Hokkaido Univ.)
3rd Author's Name Beommo Byun
3rd Author's Affiliation Hokkaido University(Hokkaido Univ.)
4th Author's Name Ikuma Amano
4th Author's Affiliation Hokkaido University(Hokkaido Univ.)
5th Author's Name Atsushi Tsurumaki-Fukuchi
5th Author's Affiliation Hokkaido University(Hokkaido Univ.)
6th Author's Name Masashi Arita
6th Author's Affiliation Hokkaido University(Hokkaido Univ.)
7th Author's Name Yasuo Takahashi
7th Author's Affiliation Hokkaido University(Hokkaido Univ.)
Date 2021-05-27
Paper # ED2021-6,CPM2021-6,SDM2021-17
Volume (vol) vol.121
Number (no) ED-44,CPM-45,SDM-46
Page pp.pp.23-26(ED), pp.23-26(CPM), pp.23-26(SDM),
#Pages 4
Date of Issue 2021-05-20 (ED, CPM, SDM)