Presentation 2021-02-05
[Invited Talk] Ru Area Selective Metal Capping and Wafer Surface Condition Control for sub-30nm Pitch Cu Damascene Interconnect
Hirokazu Aizawa, Kaoru Maekawa, Kai-Hung Yu, Gyana Pattanaik, Gert Leusink,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English)
Keyword(in Japanese) (See Japanese page)
Keyword(in English)
Paper # SDM2020-55
Date of Issue 2021-01-29 (SDM)

Conference Information
Committee SDM
Conference Date 2021/2/5(1days)
Place (in Japanese) (See Japanese page)
Place (in English) Online
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair Hiroshige Hirano(TowerPartners Semiconductor)
Vice Chair Shunichiro Ohmi(Tokyo Inst. of Tech.)
Secretary Shunichiro Ohmi(AIST)
Assistant Taiji Noda(Panasonic) / Tomoyuki Suwa(Tohoku Univ.)

Paper Information
Registration To Technical Committee on Silicon Device and Materials
Language ENG-JTITLE
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) [Invited Talk] Ru Area Selective Metal Capping and Wafer Surface Condition Control for sub-30nm Pitch Cu Damascene Interconnect
Sub Title (in English)
Keyword(1)
1st Author's Name Hirokazu Aizawa
1st Author's Affiliation TEL Technology Center, America, LLC(TTCA)
2nd Author's Name Kaoru Maekawa
2nd Author's Affiliation TEL Technology Center, America, LLC(TTCA)
3rd Author's Name Kai-Hung Yu
3rd Author's Affiliation TEL Technology Center, America, LLC(TTCA)
4th Author's Name Gyana Pattanaik
4th Author's Affiliation TEL Technology Center, America, LLC(TTCA)
5th Author's Name Gert Leusink
5th Author's Affiliation TEL Technology Center, America, LLC(TTCA)
Date 2021-02-05
Paper # SDM2020-55
Volume (vol) vol.120
Number (no) SDM-359
Page pp.pp.1-6(SDM),
#Pages 6
Date of Issue 2021-01-29 (SDM)