Presentation 2021-02-05
A Novel High Performance Scan-Test-Aware Hardened Latch Design
Ruijun Ma, Stefan Holst, Xiaoqing Wen, Aibin Yan, Hui Xu,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) As modern technology nodes become more and more susceptible to soft-errors, many radiation hardened latch designs have been proposed for reliable LSI designs. Production defects in such hardened latches are difficult to detect with conventional scan testing. In our previous work, we proposed a scan-test-aware hardened latch (STAHL) design which can tolerate soft-errors and has high defect coverage. However, STAHL has higher power and delay overhead than other hardened latches in the literature. In this paper, we propose a novel high performance and scan-test-aware hardened latch (HP-STAHL). Simulation results show that HP-STAHL provides for the first time the same benefits as STAHL in terms of soft-error tolerance and testability. HP-STAHL has lower delay and power delay product (PDP) than a standard latch, which shows that HP-STAHL has high performance.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) soft-errorscan testhardened latchdefect
Paper # DC2020-71
Date of Issue 2021-01-29 (DC)

Conference Information
Committee DC
Conference Date 2021/2/5(1days)
Place (in Japanese) (See Japanese page)
Place (in English) Online
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair Hiroshi Takahashi(Ehime Univ.)
Vice Chair Tatsuhiro Tsuchiya(Osaka Univ.)
Secretary Tatsuhiro Tsuchiya(Nihon Univ.)

Paper Information
Registration To Technical Committee on Dependable Computing
Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A Novel High Performance Scan-Test-Aware Hardened Latch Design
Sub Title (in English)
Keyword(1) soft-errorscan testhardened latchdefect
1st Author's Name Ruijun Ma
1st Author's Affiliation Kyushu Institute of Technology(KIT)
2nd Author's Name Stefan Holst
2nd Author's Affiliation Kyushu Institute of Technology(KIT)
3rd Author's Name Xiaoqing Wen
3rd Author's Affiliation Kyushu Institute of Technology(KIT)
4th Author's Name Aibin Yan
4th Author's Affiliation Anhui University(AHU)
5th Author's Name Hui Xu
5th Author's Affiliation Anhui University of Science & Technology(AUST)
Date 2021-02-05
Paper # DC2020-71
Volume (vol) vol.120
Number (no) DC-358
Page pp.pp.12-17(DC),
#Pages 6
Date of Issue 2021-01-29 (DC)