| Presentation | 2021-01-28 [Invited Talk] Subband Engineering by Combination of Channel Thickness Scaling and (111) Surface Orientation in InAs-On-Insulator nMOSFETs Kei Sumita, Kasidit Toprasertpong, Mitsuru Takenaka, Shinich Takagi, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | There has been three essential challenges of III-V nMOSFETs: (1) Low semiconductor capacitance, (2) Strong thickness fluctuation scattering and (3) Many interface traps. We have proposed that the combination of (111) surface orientation and Ultra-Thin-Body InAs-On-Insulator (InAs-OI) channels can solve these problems because the strong quantization causes the electron transition from the Γ to L valley, resulting in the high semiconductor capacitance and the suppression of thickness fluctuation scattering thanks to the heavy confinement mass in the L valley. We also experimentally demonstrated the InAs-OI nMOSFET with the channel thickness down to 3 nm, which has the excellent cut-off characteristics and the mobility enhancement with channel thickness scaling due to L valley transition as proposed. We have applied a novel self-consistent Hall-QSCV method to accurately evaluate the interface trap density inside the InAs conduction band, resulting in the lower Dit than those of InGaAs. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | InAs-On-Insulator / MOSFET / Ultra-Thin-Body / Subband / Thickness fluctuation scattering / Interface traps |
| Paper # | SDM2020-54 |
| Date of Issue | 2021-01-21 (SDM) |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 2021/1/28(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Online |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Hiroshige Hirano(TowerPartners Semiconductor) |
| Vice Chair | Shunichiro Ohmi(Tokyo Inst. of Tech.) |
| Secretary | Shunichiro Ohmi(AIST) |
| Assistant | Taiji Noda(Panasonic) / Tomoyuki Suwa(Tohoku Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | [Invited Talk] Subband Engineering by Combination of Channel Thickness Scaling and (111) Surface Orientation in InAs-On-Insulator nMOSFETs |
| Sub Title (in English) | |
| Keyword(1) | InAs-On-Insulator |
| Keyword(2) | MOSFET |
| Keyword(3) | Ultra-Thin-Body |
| Keyword(4) | Subband |
| Keyword(5) | Thickness fluctuation scattering |
| Keyword(6) | Interface traps |
| 1st Author's Name | Kei Sumita |
| 1st Author's Affiliation | University of Tokyo(Univ.of Tokyo) |
| 2nd Author's Name | Kasidit Toprasertpong |
| 2nd Author's Affiliation | University of Tokyo(Univ.of Tokyo) |
| 3rd Author's Name | Mitsuru Takenaka |
| 3rd Author's Affiliation | University of Tokyo(Univ.of Tokyo) |
| 4th Author's Name | Shinich Takagi |
| 4th Author's Affiliation | University of Tokyo(Univ.of Tokyo) |
| Date | 2021-01-28 |
| Paper # | SDM2020-54 |
| Volume (vol) | vol.120 |
| Number (no) | SDM-352 |
| Page | pp.pp.21-24(SDM), |
| #Pages | 4 |
| Date of Issue | 2021-01-21 (SDM) |