| Presentation | 2021-01-28 [Invited Talk] Vertical Gate-All-Around Tunnel FETs Using InGaAs Nanowire/Si with Core-Multishell Structure Katsuhiro Tomioka, Hironori Gamo, Junichi Motohisa, Takashi Fukui, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We demonstrate vertical gate-all-around (VGAA) tunnel FETs (TFETs) using InGaAs core-multishell (CMS) nanowire (NW)/Si heterojunction. The CMS structure was composed of modulation-doped InGaAs/InP/AlInAs/InP multi layers. The device showed current enhancement with a steep subthreshold slope (SS). The minimum SS was 21 mV/decade. The device showed high transconductance efficiency of around 520/V, which exceed the theoretical maximum limit for conventional FETs (38.5/V). |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | tunnel FET / nanowire / III-V / vertical gate-all-around |
| Paper # | SDM2020-52 |
| Date of Issue | 2021-01-21 (SDM) |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 2021/1/28(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Online |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Hiroshige Hirano(TowerPartners Semiconductor) |
| Vice Chair | Shunichiro Ohmi(Tokyo Inst. of Tech.) |
| Secretary | Shunichiro Ohmi(AIST) |
| Assistant | Taiji Noda(Panasonic) / Tomoyuki Suwa(Tohoku Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | [Invited Talk] Vertical Gate-All-Around Tunnel FETs Using InGaAs Nanowire/Si with Core-Multishell Structure |
| Sub Title (in English) | |
| Keyword(1) | tunnel FET |
| Keyword(2) | nanowire |
| Keyword(3) | III-V |
| Keyword(4) | vertical gate-all-around |
| 1st Author's Name | Katsuhiro Tomioka |
| 1st Author's Affiliation | Hokkaido University(Hokkaido Univ.) |
| 2nd Author's Name | Hironori Gamo |
| 2nd Author's Affiliation | Hokkaido University(Hokkaido Univ.) |
| 3rd Author's Name | Junichi Motohisa |
| 3rd Author's Affiliation | Hokkaido University(Hokkaido Univ.) |
| 4th Author's Name | Takashi Fukui |
| 4th Author's Affiliation | Hokkaido University(Hokkaido Univ.) |
| Date | 2021-01-28 |
| Paper # | SDM2020-52 |
| Volume (vol) | vol.120 |
| Number (no) | SDM-352 |
| Page | pp.pp.13-16(SDM), |
| #Pages | 4 |
| Date of Issue | 2021-01-21 (SDM) |