Presentation 2021-03-02
Carrier Conduction Mechanism of Bilayer Films with High Barrier Height at the NPD/mCP Interface
Ryo Sato, Yoshiyuki Seike, Tatsuo Mori,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) We studied the electrical conduction of the bilayer specimen of N,N′-bis(naphthalen-1-yl)-N,N′- bis(phenyl)benzidine (α-NPD) and 1,3-bis(N-carbazolyl) benzene (mCP). The electrical conduction of ITO/FSAM/α-NPD(50 nm)/Al can be explained by a space charge-limited current (SCLC). In the α-NPD(50 nm)/mCP(10 nm) specimen, the current shows the similar to that of the α-NPD (50nm) specimen in spite of the existence of hole barrier between α-NPD/mCP. The current in the α-NPD/mCP specimen is also proportional to the square voltage. We propose the conduction model combined with SCLC in the α-NPD layer and the tunneling in the mCP layer.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) mCP / α-NPD / SCLC model / tunneling / hole transport
Paper # OME2020-28
Date of Issue 2021-02-22 (OME)

Conference Information
Committee OME / IEE-DEI
Conference Date 2021/3/1(2days)
Place (in Japanese) (See Japanese page)
Place (in English) Online
Topics (in Japanese) (See Japanese page)
Topics (in English) Organic Molecular Electronics
Chair Yutaka Majima(Tokyo Inst. of Tech.) / 早川 直樹(名古屋大学)
Vice Chair Toshiki Yamada(NICT)
Secretary Toshiki Yamada(Osaka Univ.) / (Tokyo Inst. of Tech.)
Assistant Toshihiko Kaji(Tokyo Univ. of Agriculture and Tech.) / Yoshiyuki Seike(Aichi Inst. of Tech.) / 早瀬 悠二(富士電機) / 村上 義信(豊橋技術科学大学)

Paper Information
Registration To Technical Committee on Organic Molecular Electronics / Technical Meeting on Dielectrics and Electrical Insulation
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Carrier Conduction Mechanism of Bilayer Films with High Barrier Height at the NPD/mCP Interface
Sub Title (in English) *
Keyword(1) mCP
Keyword(2) α-NPD
Keyword(3) SCLC model
Keyword(4) tunneling
Keyword(5) hole transport
1st Author's Name Ryo Sato
1st Author's Affiliation AICHI INSTITUTE OF TECHNOLOGY(AIT)
2nd Author's Name Yoshiyuki Seike
2nd Author's Affiliation AICHI INSTITUTE OF TECHNOLOGY(AIT)
3rd Author's Name Tatsuo Mori
3rd Author's Affiliation AICHI INSTITUTE OF TECHNOLOGY(AIT)
Date 2021-03-02
Paper # OME2020-28
Volume (vol) vol.120
Number (no) OME-383
Page pp.pp.35-38(OME),
#Pages 4
Date of Issue 2021-02-22 (OME)