Presentation | 2021-01-25 Analysis on the turn-on transient of cascode connected Polarization Super-Junction GaN-FET Daisuke Arai, Yusuke Kamiyama, Shuichi Yagi, Hiroji Kawai, Hironobu Narui, Jun Imaoka, Masayoshi Yamamoto, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | The turn-on transient of the cascode connected Polarization Super-Junction (PSJ) GaN-FET with 1200V class has been investigated. For standard cascode connection the gate of the high voltage device is connected to GND. However, for PSJ-FET experiments and device simulations both showed that faster turn-on is achieved when the gate voltage is clamped by the voltage source. The device simulations indicated that clamped gate voltage for PSJ-FET enhances the return of the holes to the on-state from the off-state which accelerates the turn-on transient. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | GaN / HEMT / Polarization Super-Junction / cascode / switching / turn-on |
Paper # | EE2020-32 |
Date of Issue | 2021-01-18 (EE) |
Conference Information | |
Committee | EE |
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Conference Date | 2021/1/25(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | Online |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | DC/DC converter, New circuit for power conversion and control, others |
Chair | Tadashi Suetsugu(Fukuoka Univ.) |
Vice Chair | Hiroo Sekiya(Chiba Univ.) / Keiichi Hirose(NTT Facilities) |
Secretary | Hiroo Sekiya(Sojo Univ.) / Keiichi Hirose(Nagasaki Inst. of Applied Science) |
Assistant | Yuu Yonezawa(FUJITSU Advanced Technologies) / Yudai Furukawa(Fukuoka Univ.) / Kazufumi Yuasa(NTT Facilities) |
Paper Information | |
Registration To | Technical Committee on Energy Engineering in Electronics and Communications |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Analysis on the turn-on transient of cascode connected Polarization Super-Junction GaN-FET |
Sub Title (in English) | |
Keyword(1) | GaN |
Keyword(2) | HEMT |
Keyword(3) | Polarization Super-Junction |
Keyword(4) | cascode |
Keyword(5) | switching |
Keyword(6) | turn-on |
1st Author's Name | Daisuke Arai |
1st Author's Affiliation | Nagoya University(Nagoya Univ.) |
2nd Author's Name | Yusuke Kamiyama |
2nd Author's Affiliation | POWDEC(POWDEC) |
3rd Author's Name | Shuichi Yagi |
3rd Author's Affiliation | POWDEC(POWDEC) |
4th Author's Name | Hiroji Kawai |
4th Author's Affiliation | POWDEC(POWDEC) |
5th Author's Name | Hironobu Narui |
5th Author's Affiliation | POWDEC(POWDEC) |
6th Author's Name | Jun Imaoka |
6th Author's Affiliation | Nagoya University(Nagoya Univ.) |
7th Author's Name | Masayoshi Yamamoto |
7th Author's Affiliation | Nagoya University(Nagoya Univ.) |
Date | 2021-01-25 |
Paper # | EE2020-32 |
Volume (vol) | vol.120 |
Number (no) | EE-340 |
Page | pp.pp.47-52(EE), |
#Pages | 6 |
Date of Issue | 2021-01-18 (EE) |