| Presentation | 2021-01-29 DC Characteristics and MOS Interface properties of HfSiOx-gate AlGaN/GaN HEMTs Ryota Ochi, Erika Maeda, Toshihide Nabatame, Koji Shiozaki, Tamotsu Hashizume, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | GaN high-electron-mobility transistors (HEMTs) are very attractive for the fifth generation communication system. To build up a stable MIS gate structure, we have to consider basic properties of insulators such as bandgap, permittivity, breakdown field and chemical stability. HfSiOx has been applied to AlGaN/GaN high-electron-mobility transistors (HEMTs) as a high-$kappa$ gate dielectric. The HfSiOx-gate HEMT showed good transfer characteristics with a high transconductance expected from its $kappa$ value and a subthreshold swing of 71mV/dec. For the MOS HEMT diode, we observed excellent C-V characteristics with negligible frequency dispersion. The detailed C-V analysis showed low state densities on the order of $10^{11}cm^{-2}eV^{-1}$ at the HfSiOx/AlGaN interface. In addition, excellent operation stability of the MOS HEMT was observed at high temperatures up to 150$^circ$. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | AlGaN / GaN / MOS / HEMT / HfSiOx / Interface state / high-κ |
| Paper # | ED2020-31,MW2020-84 |
| Date of Issue | 2021-01-22 (ED, MW) |
| Conference Information | |
| Committee | MW / ED |
|---|---|
| Conference Date | 2021/1/29(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Online |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Yoshinori Kogami(Utsunomiya Univ.) / Michihiko Suhara(TMU) |
| Vice Chair | Tadashi Kawai(Univ. of Hyogo) / Kensuke Okubo(Okayama Prefectural Univ.) / Shintaro Shinjo(Mitsubishi Electric) / Hiroki Fujishiro(Tokyo Univ. of Science) |
| Secretary | Tadashi Kawai(Fujitsu Labs.) / Kensuke Okubo(Saitama Univ.) / Shintaro Shinjo(Toyama Pref. Univ.) / Hiroki Fujishiro(Fjitsu Lab.) |
| Assistant | Kyoya Takano(Tokyo Univ. of Science) / Naoki Hasegawa(Softbank) / Takuya Tsutsumi(NTT) |
| Paper Information | |
| Registration To | Technical Committee on Microwaves / Technical Committee on Electron Devices |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | DC Characteristics and MOS Interface properties of HfSiOx-gate AlGaN/GaN HEMTs |
| Sub Title (in English) | |
| Keyword(1) | AlGaN |
| Keyword(2) | GaN |
| Keyword(3) | MOS |
| Keyword(4) | HEMT |
| Keyword(5) | HfSiOx |
| Keyword(6) | Interface state |
| Keyword(7) | high-κ |
| 1st Author's Name | Ryota Ochi |
| 1st Author's Affiliation | Hokkaido University(Hokkaido Univ.) |
| 2nd Author's Name | Erika Maeda |
| 2nd Author's Affiliation | Shibaura Institute of Technology/National Institute for Materials Science(SIT/NIMS) |
| 3rd Author's Name | Toshihide Nabatame |
| 3rd Author's Affiliation | National Institute for Materials Science(NIMS) |
| 4th Author's Name | Koji Shiozaki |
| 4th Author's Affiliation | Institute of Materials and Systems for Sustainability. Nagoya University(IMaSS) |
| 5th Author's Name | Tamotsu Hashizume |
| 5th Author's Affiliation | Hokkaido University/Institute of Materials and Systems for Sustainability. Nagoya University(Hokkaido Univ/IMaSS) |
| Date | 2021-01-29 |
| Paper # | ED2020-31,MW2020-84 |
| Volume (vol) | vol.120 |
| Number (no) | ED-353,MW-354 |
| Page | pp.pp.22-25(ED), pp.22-25(MW), |
| #Pages | 4 |
| Date of Issue | 2021-01-22 (ED, MW) |