Presentation 2020-11-26
GaN-based MIS-HEMTs with Mist Chemical Vapor Deposited Al2O3
Low Rui Shan, Itsuki Nagase, Ali Baratov, Joel Tacla Asubar, Hirokuni Tokuda, Masaaki Kuzuhara, Zenji Yatabe, Kenta Naito, Motoyama Tomohiro, Yusui Nakamura,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) We have fabricated AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors (MIS-HEMTs) using Al2O3 gate dielectric deposited by mist chemical vapor deposition (mist-CVD) technique. The mist-Al2O3 MISHEMTs exhibited highly improved performance compared with the Schottky-gate devices. We obtained practically hysteresis-free transfer curves and capacitance-voltage profiles from the fabricated mist-Al2O3 MIS-HEMTs suggesting high interfacial quality of the mist-Al2O3/AlGaN structure.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Mist-CVD / AlGaN/GaN HEMT / Al2O3 insulator
Paper # ED2020-13,CPM2020-34,LQE2020-64
Date of Issue 2020-11-19 (ED, CPM, LQE)

Conference Information
Committee LQE / CPM / ED
Conference Date 2020/11/26(2days)
Place (in Japanese) (See Japanese page)
Place (in English) Online
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair Hiroshi Yasaka(Tohoku Univ.) / Mayumi Takeyama(Kitami Inst. of Tech.) / Michihiko Suhara(TMU)
Vice Chair Toshitada Umezawa(NICT) / Yuichi Nakamura(Toyohashi Univ. of Tech.) / Hiroki Fujishiro(Tokyo Univ. of Science)
Secretary Toshitada Umezawa(Osaka Univ.) / Yuichi Nakamura(NTT) / Hiroki Fujishiro(Hirosaki Univ.)
Assistant Kazuue Fujita(Hamamatsu) / Nobuhiko Nishiyama(Tokyo Inst. of Tech.) / Yasuo Kimura(Tokyo Univ. of Tech.) / Tomoaki Terasako(Ehime Univ.) / Fumihiko Hirose(Yamagata Univ.) / Takuya Tsutsumi(NTT)

Paper Information
Registration To Technical Committee on Lasers and Quantum Electronics / Technical Committee on Component Parts and Materials / Technical Committee on Electron Devices
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) GaN-based MIS-HEMTs with Mist Chemical Vapor Deposited Al2O3
Sub Title (in English)
Keyword(1) Mist-CVD
Keyword(2) AlGaN/GaN HEMT
Keyword(3) Al2O3 insulator
1st Author's Name Low Rui Shan
1st Author's Affiliation University of Fukui(Univ. of Fukui)
2nd Author's Name Itsuki Nagase
2nd Author's Affiliation University of Fukui(Univ. of Fukui)
3rd Author's Name Ali Baratov
3rd Author's Affiliation University of Fukui(Univ. of Fukui)
4th Author's Name Joel Tacla Asubar
4th Author's Affiliation University of Fukui(Univ. of Fukui)
5th Author's Name Hirokuni Tokuda
5th Author's Affiliation University of Fukui(Univ. of Fukui)
6th Author's Name Masaaki Kuzuhara
6th Author's Affiliation Kwansei Gakuin University(Kwansei Gakuin Univ.)
7th Author's Name Zenji Yatabe
7th Author's Affiliation Kumamoto University(Kumamoto Univ.)
8th Author's Name Kenta Naito
8th Author's Affiliation Kumamoto University(Kumamoto Univ.)
9th Author's Name Motoyama Tomohiro
9th Author's Affiliation Kumamoto University(Kumamoto Univ.)
10th Author's Name Yusui Nakamura
10th Author's Affiliation Kumamoto University(Kumamoto Univ.)
Date 2020-11-26
Paper # ED2020-13,CPM2020-34,LQE2020-64
Volume (vol) vol.120
Number (no) ED-254,CPM-255,LQE-256
Page pp.pp.49-52(ED), pp.49-52(CPM), pp.49-52(LQE),
#Pages 4
Date of Issue 2020-11-19 (ED, CPM, LQE)