| Presentation | 2020-11-26 GaN-based MIS-HEMTs with Mist Chemical Vapor Deposited Al2O3 Low Rui Shan, Itsuki Nagase, Ali Baratov, Joel Tacla Asubar, Hirokuni Tokuda, Masaaki Kuzuhara, Zenji Yatabe, Kenta Naito, Motoyama Tomohiro, Yusui Nakamura, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have fabricated AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors (MIS-HEMTs) using Al2O3 gate dielectric deposited by mist chemical vapor deposition (mist-CVD) technique. The mist-Al2O3 MISHEMTs exhibited highly improved performance compared with the Schottky-gate devices. We obtained practically hysteresis-free transfer curves and capacitance-voltage profiles from the fabricated mist-Al2O3 MIS-HEMTs suggesting high interfacial quality of the mist-Al2O3/AlGaN structure. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Mist-CVD / AlGaN/GaN HEMT / Al2O3 insulator |
| Paper # | ED2020-13,CPM2020-34,LQE2020-64 |
| Date of Issue | 2020-11-19 (ED, CPM, LQE) |
| Conference Information | |
| Committee | LQE / CPM / ED |
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| Conference Date | 2020/11/26(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Online |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Hiroshi Yasaka(Tohoku Univ.) / Mayumi Takeyama(Kitami Inst. of Tech.) / Michihiko Suhara(TMU) |
| Vice Chair | Toshitada Umezawa(NICT) / Yuichi Nakamura(Toyohashi Univ. of Tech.) / Hiroki Fujishiro(Tokyo Univ. of Science) |
| Secretary | Toshitada Umezawa(Osaka Univ.) / Yuichi Nakamura(NTT) / Hiroki Fujishiro(Hirosaki Univ.) |
| Assistant | Kazuue Fujita(Hamamatsu) / Nobuhiko Nishiyama(Tokyo Inst. of Tech.) / Yasuo Kimura(Tokyo Univ. of Tech.) / Tomoaki Terasako(Ehime Univ.) / Fumihiko Hirose(Yamagata Univ.) / Takuya Tsutsumi(NTT) |
| Paper Information | |
| Registration To | Technical Committee on Lasers and Quantum Electronics / Technical Committee on Component Parts and Materials / Technical Committee on Electron Devices |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | GaN-based MIS-HEMTs with Mist Chemical Vapor Deposited Al2O3 |
| Sub Title (in English) | |
| Keyword(1) | Mist-CVD |
| Keyword(2) | AlGaN/GaN HEMT |
| Keyword(3) | Al2O3 insulator |
| 1st Author's Name | Low Rui Shan |
| 1st Author's Affiliation | University of Fukui(Univ. of Fukui) |
| 2nd Author's Name | Itsuki Nagase |
| 2nd Author's Affiliation | University of Fukui(Univ. of Fukui) |
| 3rd Author's Name | Ali Baratov |
| 3rd Author's Affiliation | University of Fukui(Univ. of Fukui) |
| 4th Author's Name | Joel Tacla Asubar |
| 4th Author's Affiliation | University of Fukui(Univ. of Fukui) |
| 5th Author's Name | Hirokuni Tokuda |
| 5th Author's Affiliation | University of Fukui(Univ. of Fukui) |
| 6th Author's Name | Masaaki Kuzuhara |
| 6th Author's Affiliation | Kwansei Gakuin University(Kwansei Gakuin Univ.) |
| 7th Author's Name | Zenji Yatabe |
| 7th Author's Affiliation | Kumamoto University(Kumamoto Univ.) |
| 8th Author's Name | Kenta Naito |
| 8th Author's Affiliation | Kumamoto University(Kumamoto Univ.) |
| 9th Author's Name | Motoyama Tomohiro |
| 9th Author's Affiliation | Kumamoto University(Kumamoto Univ.) |
| 10th Author's Name | Yusui Nakamura |
| 10th Author's Affiliation | Kumamoto University(Kumamoto Univ.) |
| Date | 2020-11-26 |
| Paper # | ED2020-13,CPM2020-34,LQE2020-64 |
| Volume (vol) | vol.120 |
| Number (no) | ED-254,CPM-255,LQE-256 |
| Page | pp.pp.49-52(ED), pp.49-52(CPM), pp.49-52(LQE), |
| #Pages | 4 |
| Date of Issue | 2020-11-19 (ED, CPM, LQE) |