| Presentation | 2020-11-27 Improved performance in GaN-based HEMTs with insulated gate structures Ali Baratov, Takashi Ozawa, Shunpei Yamashita, Joel T. Asubar, Hirokuni Tokuda, Masaaki Kuzuhara, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Several groups have reported improved performance in GaN-based transistors employing metal-insulator-semiconductor (MIS) structures over their Schottky-gate (SG) device counterparts. However, to the best of authors’ knowledge, large signal characteristics of those devices are rarely discussed or compared. In this study we have fabricated (ZrO2, SiO2) MIS and SiN passivated SG HEMTs, using Al0.25Ga0.75N/GaN epitaxially grown on semi-insulating SiC substrates. S-parameters were measured and subsequent de-embedding calculations were performed to quantify parasitic components. Alongside with small signal parameters, large signal load-pull measurements were performed. Electron mobility of gateless devices was also measured and compared. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | AlGaN/GaN HEMT / MIS-HEMT / high frequency performance / s-parameters / LP measurements |
| Paper # | ED2020-16,CPM2020-37,LQE2020-67 |
| Date of Issue | 2020-11-19 (ED, CPM, LQE) |
| Conference Information | |
| Committee | LQE / CPM / ED |
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| Conference Date | 2020/11/26(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Online |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Hiroshi Yasaka(Tohoku Univ.) / Mayumi Takeyama(Kitami Inst. of Tech.) / Michihiko Suhara(TMU) |
| Vice Chair | Toshitada Umezawa(NICT) / Yuichi Nakamura(Toyohashi Univ. of Tech.) / Hiroki Fujishiro(Tokyo Univ. of Science) |
| Secretary | Toshitada Umezawa(Osaka Univ.) / Yuichi Nakamura(NTT) / Hiroki Fujishiro(Hirosaki Univ.) |
| Assistant | Kazuue Fujita(Hamamatsu) / Nobuhiko Nishiyama(Tokyo Inst. of Tech.) / Yasuo Kimura(Tokyo Univ. of Tech.) / Tomoaki Terasako(Ehime Univ.) / Fumihiko Hirose(Yamagata Univ.) / Takuya Tsutsumi(NTT) |
| Paper Information | |
| Registration To | Technical Committee on Lasers and Quantum Electronics / Technical Committee on Component Parts and Materials / Technical Committee on Electron Devices |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Improved performance in GaN-based HEMTs with insulated gate structures |
| Sub Title (in English) | |
| Keyword(1) | AlGaN/GaN HEMT |
| Keyword(2) | MIS-HEMT |
| Keyword(3) | high frequency performance |
| Keyword(4) | s-parameters |
| Keyword(5) | LP measurements |
| 1st Author's Name | Ali Baratov |
| 1st Author's Affiliation | University of Fukui(Univ. of Fukui) |
| 2nd Author's Name | Takashi Ozawa |
| 2nd Author's Affiliation | University of Fukui(Univ. of Fukui) |
| 3rd Author's Name | Shunpei Yamashita |
| 3rd Author's Affiliation | University of Fukui(Univ. of Fukui) |
| 4th Author's Name | Joel T. Asubar |
| 4th Author's Affiliation | University of Fukui(Univ. of Fukui) |
| 5th Author's Name | Hirokuni Tokuda |
| 5th Author's Affiliation | University of Fukui(Univ. of Fukui) |
| 6th Author's Name | Masaaki Kuzuhara |
| 6th Author's Affiliation | Kwansei Gakuin University(Kwansei Gakuin Univ.) |
| Date | 2020-11-27 |
| Paper # | ED2020-16,CPM2020-37,LQE2020-67 |
| Volume (vol) | vol.120 |
| Number (no) | ED-254,CPM-255,LQE-256 |
| Page | pp.pp.60-62(ED), pp.60-62(CPM), pp.60-62(LQE), |
| #Pages | 3 |
| Date of Issue | 2020-11-19 (ED, CPM, LQE) |