| Presentation | 2020-11-26 Enhanced Breakdown Voltage in AlGaN/GaN HEMTs by Oxygen Plasma Treatment Shunsuke Kamiya, Takashi Nishitani, Yu Matsuda, Nozomu Takano, Joel T. Asubar, Hirokuni Tokuda, Masaaki Kuzuhara, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | With its high critical electric field as consequence of its wide bandgap, gallium nitride (GaN) is considered a leading post-silicon semiconductor material well-suited for power devices. However, at present, AlGaN/GaN high-electron-mobility transistors (HEMTs) usually exhibit effective critical field values much lower than the theoretical limit. In this work, we report on the improved breakdown voltage characteristics in oxygen plasma-treated AlGaN/GaN HEMTs. Treatment was performed after the gate metal deposition, effectively exposing only the AlGaN surface in the access regions to oxygen plasma. It is believed that the increased breakdown voltage after oxygen plasma treatment is due to reduced surface charging, leading to a relatively flat distribution of electric field along the gate-drain access region. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | gallium nitride / high-electron-mobility transistor / O2 plasma treatment / breakdown voltage |
| Paper # | ED2020-12,CPM2020-33,LQE2020-63 |
| Date of Issue | 2020-11-19 (ED, CPM, LQE) |
| Conference Information | |
| Committee | LQE / CPM / ED |
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| Conference Date | 2020/11/26(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Online |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Hiroshi Yasaka(Tohoku Univ.) / Mayumi Takeyama(Kitami Inst. of Tech.) / Michihiko Suhara(TMU) |
| Vice Chair | Toshitada Umezawa(NICT) / Yuichi Nakamura(Toyohashi Univ. of Tech.) / Hiroki Fujishiro(Tokyo Univ. of Science) |
| Secretary | Toshitada Umezawa(Osaka Univ.) / Yuichi Nakamura(NTT) / Hiroki Fujishiro(Hirosaki Univ.) |
| Assistant | Kazuue Fujita(Hamamatsu) / Nobuhiko Nishiyama(Tokyo Inst. of Tech.) / Yasuo Kimura(Tokyo Univ. of Tech.) / Tomoaki Terasako(Ehime Univ.) / Fumihiko Hirose(Yamagata Univ.) / Takuya Tsutsumi(NTT) |
| Paper Information | |
| Registration To | Technical Committee on Lasers and Quantum Electronics / Technical Committee on Component Parts and Materials / Technical Committee on Electron Devices |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Enhanced Breakdown Voltage in AlGaN/GaN HEMTs by Oxygen Plasma Treatment |
| Sub Title (in English) | |
| Keyword(1) | gallium nitride |
| Keyword(2) | high-electron-mobility transistor |
| Keyword(3) | O2 plasma treatment |
| Keyword(4) | breakdown voltage |
| 1st Author's Name | Shunsuke Kamiya |
| 1st Author's Affiliation | University of Fukui(Univ. of Fukui) |
| 2nd Author's Name | Takashi Nishitani |
| 2nd Author's Affiliation | University of Fukui(Univ. of Fukui) |
| 3rd Author's Name | Yu Matsuda |
| 3rd Author's Affiliation | University of Fukui(Univ. of Fukui) |
| 4th Author's Name | Nozomu Takano |
| 4th Author's Affiliation | University of Fukui(Univ. of Fukui) |
| 5th Author's Name | Joel T. Asubar |
| 5th Author's Affiliation | University of Fukui(Univ. of Fukui) |
| 6th Author's Name | Hirokuni Tokuda |
| 6th Author's Affiliation | University of Fukui(Univ. of Fukui) |
| 7th Author's Name | Masaaki Kuzuhara |
| 7th Author's Affiliation | Kwansei Gakuin University(Kwansei Gakuin Univ.) |
| Date | 2020-11-26 |
| Paper # | ED2020-12,CPM2020-33,LQE2020-63 |
| Volume (vol) | vol.120 |
| Number (no) | ED-254,CPM-255,LQE-256 |
| Page | pp.pp.45-48(ED), pp.45-48(CPM), pp.45-48(LQE), |
| #Pages | 4 |
| Date of Issue | 2020-11-19 (ED, CPM, LQE) |