| Presentation | 2020-11-27 Crystalline Quality Improvement of Sputtered h-BN on Sapphire by High-Temperature Annealing Ryoji Kataoka, Haruhiko Koizumi, Sho Iwayama, Hideto Miyake, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Hexagonal boron nitride(h-BN) is a two-dimensional layered materials and is expected to functions as a strain relaxation layer and a release layer. Conventionally, h-BN has been produced by using a crystal growth method such as metalorganic vapor phase epitaxy (MOVPE) or molecular beam epitaxy (MBE). We have achieved high crystal quality of sputtered AlN on sapphire substrates by high-temperature face-to-face annealing (FFA). In this work, we aimed to the crystal quality improvement of sputtered h-BN on sapphire substrates by FFA. After 1700 oC, 3.0 hours of FFA, crystal quality of h-BN was improved and full-width at half maximum of Raman scattering was 17 cm-1. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Hexagonal boron nitride / 2D materials / Sputter / face-to-face High-Temperature Annealing / Ultraviolet LED |
| Paper # | ED2020-22,CPM2020-43,LQE2020-73 |
| Date of Issue | 2020-11-19 (ED, CPM, LQE) |
| Conference Information | |
| Committee | LQE / CPM / ED |
|---|---|
| Conference Date | 2020/11/26(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Online |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Hiroshi Yasaka(Tohoku Univ.) / Mayumi Takeyama(Kitami Inst. of Tech.) / Michihiko Suhara(TMU) |
| Vice Chair | Toshitada Umezawa(NICT) / Yuichi Nakamura(Toyohashi Univ. of Tech.) / Hiroki Fujishiro(Tokyo Univ. of Science) |
| Secretary | Toshitada Umezawa(Osaka Univ.) / Yuichi Nakamura(NTT) / Hiroki Fujishiro(Hirosaki Univ.) |
| Assistant | Kazuue Fujita(Hamamatsu) / Nobuhiko Nishiyama(Tokyo Inst. of Tech.) / Yasuo Kimura(Tokyo Univ. of Tech.) / Tomoaki Terasako(Ehime Univ.) / Fumihiko Hirose(Yamagata Univ.) / Takuya Tsutsumi(NTT) |
| Paper Information | |
| Registration To | Technical Committee on Lasers and Quantum Electronics / Technical Committee on Component Parts and Materials / Technical Committee on Electron Devices |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Crystalline Quality Improvement of Sputtered h-BN on Sapphire by High-Temperature Annealing |
| Sub Title (in English) | |
| Keyword(1) | Hexagonal boron nitride |
| Keyword(2) | 2D materials |
| Keyword(3) | Sputter |
| Keyword(4) | face-to-face High-Temperature Annealing |
| Keyword(5) | Ultraviolet LED |
| 1st Author's Name | Ryoji Kataoka |
| 1st Author's Affiliation | Mie University(Mie Univ.) |
| 2nd Author's Name | Haruhiko Koizumi |
| 2nd Author's Affiliation | Mie University(Mie Univ.) |
| 3rd Author's Name | Sho Iwayama |
| 3rd Author's Affiliation | Mie University(Mie Univ.) |
| 4th Author's Name | Hideto Miyake |
| 4th Author's Affiliation | Mie University(Mie Univ.) |
| Date | 2020-11-27 |
| Paper # | ED2020-22,CPM2020-43,LQE2020-73 |
| Volume (vol) | vol.120 |
| Number (no) | ED-254,CPM-255,LQE-256 |
| Page | pp.pp.83-86(ED), pp.83-86(CPM), pp.83-86(LQE), |
| #Pages | 4 |
| Date of Issue | 2020-11-19 (ED, CPM, LQE) |