| Presentation | 2020-11-26 Two-Dimensional Characterization of n-GaN Schottky Contacts Printed by Using Ni Nanoink Yuto Kawasumi, Yuto Yasui, Yukiyasu Kashiwagi, Toshiyuki Tamai, Kenji Shiojima, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Two-dimensional characterization of n-GaN Schottky contacts formed by printing method using Ni nanoink was performed by scanning internal photoemission microscopy (SIPM). The sample annealed at 400 ℃ showed a large series resistance and nonuniformity over the electrode. The sample annealed at 500 ℃ obtained better I-V characteristics with a large q$phi$B value of 1.21 eV, a small n-value of 1.13 and better uniformity. However, when annealing temperature increased to 600 ℃, the I-V characteristics became leaky due to the interfacial reaction between Ni and GaN. The q$phi$B value obtained in this study was comparable with that a conventional evaporated Ni contact, and SIPM indicated that the printing method using nanoink is a candidate to form Schottky contacts on n-GaN. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / Schottky contact / printed electronics / scanning internal photoemission microscopy |
| Paper # | ED2020-10,CPM2020-31,LQE2020-61 |
| Date of Issue | 2020-11-19 (ED, CPM, LQE) |
| Conference Information | |
| Committee | LQE / CPM / ED |
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| Conference Date | 2020/11/26(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Online |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Hiroshi Yasaka(Tohoku Univ.) / Mayumi Takeyama(Kitami Inst. of Tech.) / Michihiko Suhara(TMU) |
| Vice Chair | Toshitada Umezawa(NICT) / Yuichi Nakamura(Toyohashi Univ. of Tech.) / Hiroki Fujishiro(Tokyo Univ. of Science) |
| Secretary | Toshitada Umezawa(Osaka Univ.) / Yuichi Nakamura(NTT) / Hiroki Fujishiro(Hirosaki Univ.) |
| Assistant | Kazuue Fujita(Hamamatsu) / Nobuhiko Nishiyama(Tokyo Inst. of Tech.) / Yasuo Kimura(Tokyo Univ. of Tech.) / Tomoaki Terasako(Ehime Univ.) / Fumihiko Hirose(Yamagata Univ.) / Takuya Tsutsumi(NTT) |
| Paper Information | |
| Registration To | Technical Committee on Lasers and Quantum Electronics / Technical Committee on Component Parts and Materials / Technical Committee on Electron Devices |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Two-Dimensional Characterization of n-GaN Schottky Contacts Printed by Using Ni Nanoink |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | Schottky contact |
| Keyword(3) | printed electronics |
| Keyword(4) | scanning internal photoemission microscopy |
| 1st Author's Name | Yuto Kawasumi |
| 1st Author's Affiliation | University of Fukui(Univ. of Fukui) |
| 2nd Author's Name | Yuto Yasui |
| 2nd Author's Affiliation | University of Fukui(Univ. of Fukui) |
| 3rd Author's Name | Yukiyasu Kashiwagi |
| 3rd Author's Affiliation | Osaka Research Institute of Industrial Science and Technology(ORIST) |
| 4th Author's Name | Toshiyuki Tamai |
| 4th Author's Affiliation | Osaka Research Institute of Industrial Science and Technology(ORIST) |
| 5th Author's Name | Kenji Shiojima |
| 5th Author's Affiliation | University of Fukui(Univ. of Fukui) |
| Date | 2020-11-26 |
| Paper # | ED2020-10,CPM2020-31,LQE2020-61 |
| Volume (vol) | vol.120 |
| Number (no) | ED-254,CPM-255,LQE-256 |
| Page | pp.pp.37-40(ED), pp.37-40(CPM), pp.37-40(LQE), |
| #Pages | 4 |
| Date of Issue | 2020-11-19 (ED, CPM, LQE) |