| Presentation | 2020-11-27 First demonstration of InGaN QW tunable single-mode laser with periodically slotted structure Masahiro Uemukai, Akihiro Higuchi, Tomoyuki Tanikawa, Ryuji Katayama, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Nitride semiconductors such as GaN and AlN have strong optical nonlinearity, and they can be applied to nonlinear optical devices. 200-nm band deep UV light and 800-nm band squeezed light can be obtained from such devices pumped by 400-nm band InGaN QW single-mode lasers. In order to pump the high-efficiency wavelength conversion devices having a narrow wavelength bandwidth, wavelength tunable single-mode lasers are required. In this work, we design and fabricate an InGaN single-mode laser with a periodically slotted structure, and demonstrate wavelength tunable single-mode lasing by current injection to the periodic structures. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Nitride semiconductors / Semiconductor lasers / Wavelength tuning / Single-mode lasers / Slotted lasers |
| Paper # | ED2020-21,CPM2020-42,LQE2020-72 |
| Date of Issue | 2020-11-19 (ED, CPM, LQE) |
| Conference Information | |
| Committee | LQE / CPM / ED |
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| Conference Date | 2020/11/26(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Online |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Hiroshi Yasaka(Tohoku Univ.) / Mayumi Takeyama(Kitami Inst. of Tech.) / Michihiko Suhara(TMU) |
| Vice Chair | Toshitada Umezawa(NICT) / Yuichi Nakamura(Toyohashi Univ. of Tech.) / Hiroki Fujishiro(Tokyo Univ. of Science) |
| Secretary | Toshitada Umezawa(Osaka Univ.) / Yuichi Nakamura(NTT) / Hiroki Fujishiro(Hirosaki Univ.) |
| Assistant | Kazuue Fujita(Hamamatsu) / Nobuhiko Nishiyama(Tokyo Inst. of Tech.) / Yasuo Kimura(Tokyo Univ. of Tech.) / Tomoaki Terasako(Ehime Univ.) / Fumihiko Hirose(Yamagata Univ.) / Takuya Tsutsumi(NTT) |
| Paper Information | |
| Registration To | Technical Committee on Lasers and Quantum Electronics / Technical Committee on Component Parts and Materials / Technical Committee on Electron Devices |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | First demonstration of InGaN QW tunable single-mode laser with periodically slotted structure |
| Sub Title (in English) | |
| Keyword(1) | Nitride semiconductors |
| Keyword(2) | Semiconductor lasers |
| Keyword(3) | Wavelength tuning |
| Keyword(4) | Single-mode lasers |
| Keyword(5) | Slotted lasers |
| 1st Author's Name | Masahiro Uemukai |
| 1st Author's Affiliation | Osaka University(Osaka Univ.) |
| 2nd Author's Name | Akihiro Higuchi |
| 2nd Author's Affiliation | Osaka University(Osaka Univ.) |
| 3rd Author's Name | Tomoyuki Tanikawa |
| 3rd Author's Affiliation | Osaka University(Osaka Univ.) |
| 4th Author's Name | Ryuji Katayama |
| 4th Author's Affiliation | Osaka University(Osaka Univ.) |
| Date | 2020-11-27 |
| Paper # | ED2020-21,CPM2020-42,LQE2020-72 |
| Volume (vol) | vol.120 |
| Number (no) | ED-254,CPM-255,LQE-256 |
| Page | pp.pp.79-82(ED), pp.79-82(CPM), pp.79-82(LQE), |
| #Pages | 4 |
| Date of Issue | 2020-11-19 (ED, CPM, LQE) |