| Presentation | 2020-11-26 Estimation of electrical properties of AlGaN/GaN MIS-HEMTs with SiO2/Al2O3 double insulators fabricated by ALD Shunichi Yokoi, Toshiharu Kubo, Takashi Egawa, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Since SiO2 has a large band gap of approximately 9 eV, the interface characteristics of the interface and gate leakage characteristics can be good by forming a double insulator film of Al2O3 and SiO2 by atomic layer deposition (ALD). First, SiO2/ Al2O3/AlGaN / GaN MIS-HEMT was prepared using ALD, and its I-V characteristics were evaluated including temperature dependence. Furthermore, an AlGaN / GaN MIS-HEMT having a recess structure was prepared using a double insulator, and its electrical characteristics were evaluated. The dynamic threshold voltage shift (⊿Vth) was 0.2 V , and good interfacial characteristics were obtained. We confirmed that the threshold voltage shifted from -4.8 V to 0.2 V by using the recess structure. As the measurement temperature increased, Ig increased by more than 4 orders of magnitude on both the positive bias side and the negative bias side under the measurement conditions from room temperature to 200 °C. The Ig at a Vg of 8 V under room temperature was 1.5×10-7 mA/mm, which indicates both ⊿Vth and Ig can be suppressed by using SiO2/Al2O3 double layer structures. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / MIS / HEMT / ALD / PDA / SiO2 / Al2O3 |
| Paper # | ED2020-8,CPM2020-29,LQE2020-59 |
| Date of Issue | 2020-11-19 (ED, CPM, LQE) |
| Conference Information | |
| Committee | LQE / CPM / ED |
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| Conference Date | 2020/11/26(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Online |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Hiroshi Yasaka(Tohoku Univ.) / Mayumi Takeyama(Kitami Inst. of Tech.) / Michihiko Suhara(TMU) |
| Vice Chair | Toshitada Umezawa(NICT) / Yuichi Nakamura(Toyohashi Univ. of Tech.) / Hiroki Fujishiro(Tokyo Univ. of Science) |
| Secretary | Toshitada Umezawa(Osaka Univ.) / Yuichi Nakamura(NTT) / Hiroki Fujishiro(Hirosaki Univ.) |
| Assistant | Kazuue Fujita(Hamamatsu) / Nobuhiko Nishiyama(Tokyo Inst. of Tech.) / Yasuo Kimura(Tokyo Univ. of Tech.) / Tomoaki Terasako(Ehime Univ.) / Fumihiko Hirose(Yamagata Univ.) / Takuya Tsutsumi(NTT) |
| Paper Information | |
| Registration To | Technical Committee on Lasers and Quantum Electronics / Technical Committee on Component Parts and Materials / Technical Committee on Electron Devices |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Estimation of electrical properties of AlGaN/GaN MIS-HEMTs with SiO2/Al2O3 double insulators fabricated by ALD |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | MIS |
| Keyword(3) | HEMT |
| Keyword(4) | ALD |
| Keyword(5) | PDA |
| Keyword(6) | SiO2 |
| Keyword(7) | Al2O3 |
| 1st Author's Name | Shunichi Yokoi |
| 1st Author's Affiliation | Nagoya Institute of Technology(Nagoya Inst. of Tech.) |
| 2nd Author's Name | Toshiharu Kubo |
| 2nd Author's Affiliation | Nagoya Institute of Technology(Nagoya Inst. of Tech.) |
| 3rd Author's Name | Takashi Egawa |
| 3rd Author's Affiliation | Nagoya Institute of Technology(Nagoya Inst. of Tech.) |
| Date | 2020-11-26 |
| Paper # | ED2020-8,CPM2020-29,LQE2020-59 |
| Volume (vol) | vol.120 |
| Number (no) | ED-254,CPM-255,LQE-256 |
| Page | pp.pp.29-32(ED), pp.29-32(CPM), pp.29-32(LQE), |
| #Pages | 4 |
| Date of Issue | 2020-11-19 (ED, CPM, LQE) |