Presentation 2020-11-27
Optimization of the optical waveguide layer in AlGaN-based UV-B LD
Shunya Tanaka, Kosuke Sato, Shinji Yasue, Yuya Ogino, Kazuki Yamada, Sayaka Ishizuka, Tomoya Omori, Shohei Teramura, Sho Iwayama, Hideto Miyake, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Recently, the group reported the realization of current injection semiconductor lasers in the UV-B region. In the future, reducing the threshold current density will be the most important issue. In this study, we fabricated a GRIN-SCH structure current injection laser that can obtain a high light confinement coefficient Γ and can be expected to have a low threshold current density, and confirmed the operation of a room temperature pulsed laser with oscillation. Wavelength of 302 nm. Furthermore, it was confirmed that the threshold current density was reduced to 24 kA/cm2 by double-side facet coating at a cavity length of 700 ?m.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) MOVPE / AlGaN / UV-B laser diode / GRIN-SCH
Paper # ED2020-20,CPM2020-41,LQE2020-71
Date of Issue 2020-11-19 (ED, CPM, LQE)

Conference Information
Committee LQE / CPM / ED
Conference Date 2020/11/26(2days)
Place (in Japanese) (See Japanese page)
Place (in English) Online
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair Hiroshi Yasaka(Tohoku Univ.) / Mayumi Takeyama(Kitami Inst. of Tech.) / Michihiko Suhara(TMU)
Vice Chair Toshitada Umezawa(NICT) / Yuichi Nakamura(Toyohashi Univ. of Tech.) / Hiroki Fujishiro(Tokyo Univ. of Science)
Secretary Toshitada Umezawa(Osaka Univ.) / Yuichi Nakamura(NTT) / Hiroki Fujishiro(Hirosaki Univ.)
Assistant Kazuue Fujita(Hamamatsu) / Nobuhiko Nishiyama(Tokyo Inst. of Tech.) / Yasuo Kimura(Tokyo Univ. of Tech.) / Tomoaki Terasako(Ehime Univ.) / Fumihiko Hirose(Yamagata Univ.) / Takuya Tsutsumi(NTT)

Paper Information
Registration To Technical Committee on Lasers and Quantum Electronics / Technical Committee on Component Parts and Materials / Technical Committee on Electron Devices
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Optimization of the optical waveguide layer in AlGaN-based UV-B LD
Sub Title (in English)
Keyword(1) MOVPE
Keyword(2) AlGaN
Keyword(3) UV-B laser diode
Keyword(4) GRIN-SCH
1st Author's Name Shunya Tanaka
1st Author's Affiliation Meijo University(Meijo Univ.)
2nd Author's Name Kosuke Sato
2nd Author's Affiliation Advanced Devices Technology Center, Asahi-Kasei(Asahi-Kasei)
3rd Author's Name Shinji Yasue
3rd Author's Affiliation Meijo University(Meijo Univ.)
4th Author's Name Yuya Ogino
4th Author's Affiliation Meijo University(Meijo Univ.)
5th Author's Name Kazuki Yamada
5th Author's Affiliation Meijo University(Meijo Univ.)
6th Author's Name Sayaka Ishizuka
6th Author's Affiliation Meijo University(Meijo Univ.)
7th Author's Name Tomoya Omori
7th Author's Affiliation Meijo University(Meijo Univ.)
8th Author's Name Shohei Teramura
8th Author's Affiliation Meijo University(Meijo Univ.)
9th Author's Name Sho Iwayama
9th Author's Affiliation Meijo University(Meijo Univ.)
10th Author's Name Hideto Miyake
10th Author's Affiliation Mie University(Mie Univ.)
11th Author's Name Motoaki Iwaya
11th Author's Affiliation Meijo University(Meijo Univ.)
12th Author's Name Tetsuya Takeuchi
12th Author's Affiliation Meijo University(Meijo Univ.)
13th Author's Name Satoshi Kamiyama
13th Author's Affiliation Meijo University(Meijo Univ.)
14th Author's Name Isamu Akasaki
14th Author's Affiliation Meijo University(Meijo Univ.)
Date 2020-11-27
Paper # ED2020-20,CPM2020-41,LQE2020-71
Volume (vol) vol.120
Number (no) ED-254,CPM-255,LQE-256
Page pp.pp.75-78(ED), pp.75-78(CPM), pp.75-78(LQE),
#Pages 4
Date of Issue 2020-11-19 (ED, CPM, LQE)