Presentation 2020-11-27
Study on crystal growth for nanowire-based light emitter including multiple-quantum-shell and tunnel junction
Yoshiya Miyamoto, Naoki Sone, Weifang Lu, Renji Okuda, Kazuma Ito, Koji Okuno, Kazuyoshi Iida, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya, Isamu Akasaki,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) In this work, we investigated the growth conditions of n-GaN cap layer for nanowire-based laser diodes. The selective-area growth of the MQS/nanowire core-shell structures on patterned n-GaN/sapphire and GaN substrate was performed by metalorganic vapour phase epitaxy. Further, the core-shell structures were covered with the tunnel junction and the n-GaN cap layer. A two-step growth of n-GaN cap layer was carried out under various growth conditions. The improvement in surface flatness and void reduction in between the nanowires was confirmed by scanning electron microscope observation. In addition, reasonably low operating voltage and distinct light emission were observed in the electroluminescence measurements.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Nanowire / MOVPE / GaN / Light emitter
Paper # ED2020-19,CPM2020-40,LQE2020-70
Date of Issue 2020-11-19 (ED, CPM, LQE)

Conference Information
Committee LQE / CPM / ED
Conference Date 2020/11/26(2days)
Place (in Japanese) (See Japanese page)
Place (in English) Online
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair Hiroshi Yasaka(Tohoku Univ.) / Mayumi Takeyama(Kitami Inst. of Tech.) / Michihiko Suhara(TMU)
Vice Chair Toshitada Umezawa(NICT) / Yuichi Nakamura(Toyohashi Univ. of Tech.) / Hiroki Fujishiro(Tokyo Univ. of Science)
Secretary Toshitada Umezawa(Osaka Univ.) / Yuichi Nakamura(NTT) / Hiroki Fujishiro(Hirosaki Univ.)
Assistant Kazuue Fujita(Hamamatsu) / Nobuhiko Nishiyama(Tokyo Inst. of Tech.) / Yasuo Kimura(Tokyo Univ. of Tech.) / Tomoaki Terasako(Ehime Univ.) / Fumihiko Hirose(Yamagata Univ.) / Takuya Tsutsumi(NTT)

Paper Information
Registration To Technical Committee on Lasers and Quantum Electronics / Technical Committee on Component Parts and Materials / Technical Committee on Electron Devices
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Study on crystal growth for nanowire-based light emitter including multiple-quantum-shell and tunnel junction
Sub Title (in English)
Keyword(1) Nanowire
Keyword(2) MOVPE
Keyword(3) GaN
Keyword(4) Light emitter
1st Author's Name Yoshiya Miyamoto
1st Author's Affiliation Meijo University(Meijo Univ.)
2nd Author's Name Naoki Sone
2nd Author's Affiliation Meijo University(Meijo Univ.)
3rd Author's Name Weifang Lu
3rd Author's Affiliation Meijo University(Meijo Univ.)
4th Author's Name Renji Okuda
4th Author's Affiliation Meijo University(Meijo Univ.)
5th Author's Name Kazuma Ito
5th Author's Affiliation Meijo University(Meijo Univ.)
6th Author's Name Koji Okuno
6th Author's Affiliation Meijo University(Meijo Univ.)
7th Author's Name Kazuyoshi Iida
7th Author's Affiliation Meijo University(Meijo Univ.)
8th Author's Name Satoshi Kamiyama
8th Author's Affiliation Meijo University(Meijo Univ.)
9th Author's Name Tetsuya Takeuchi
9th Author's Affiliation Meijo University(Meijo Univ.)
10th Author's Name Motoaki Iwaya
10th Author's Affiliation Meijo University(Meijo Univ.)
11th Author's Name Isamu Akasaki
11th Author's Affiliation Meijo University/Akasaki Research Center, Nagoya Univ.(Meijo Univ./Akasaki Research Center, Nagoya Univ.)
Date 2020-11-27
Paper # ED2020-19,CPM2020-40,LQE2020-70
Volume (vol) vol.120
Number (no) ED-254,CPM-255,LQE-256
Page pp.pp.71-74(ED), pp.71-74(CPM), pp.71-74(LQE),
#Pages 4
Date of Issue 2020-11-19 (ED, CPM, LQE)