| Presentation | 2020-11-27 Optimization of lateral Mg activation in LEDs with GaN tunnel junctions Mikiko Tasaki, Kazuki Kiyohara, Mahito Odawara, Taichi Ito, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, Isamu Akasaki, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Current confinement structures with GaN tunnel junctions have been utilized in LEDs and laser diodes. In such devices, a lateral Mg activation with high annealing temperature (725℃) and long time (30min) is required. In this study, we carried out Mg activations under various conditions, such as temperatures, time, and atmospheric gases (O2 or N2). We then found that higher light output power values were obtained by using 725℃ for 45min and 800℃ for 15min under oxygen gas. On the other hand, n-contact resistances were increased by the annealing under oxygen gas. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN tunnel junctions / lateral Mg activation / annealing |
| Paper # | ED2020-18,CPM2020-39,LQE2020-69 |
| Date of Issue | 2020-11-19 (ED, CPM, LQE) |
| Conference Information | |
| Committee | LQE / CPM / ED |
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| Conference Date | 2020/11/26(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Online |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Hiroshi Yasaka(Tohoku Univ.) / Mayumi Takeyama(Kitami Inst. of Tech.) / Michihiko Suhara(TMU) |
| Vice Chair | Toshitada Umezawa(NICT) / Yuichi Nakamura(Toyohashi Univ. of Tech.) / Hiroki Fujishiro(Tokyo Univ. of Science) |
| Secretary | Toshitada Umezawa(Osaka Univ.) / Yuichi Nakamura(NTT) / Hiroki Fujishiro(Hirosaki Univ.) |
| Assistant | Kazuue Fujita(Hamamatsu) / Nobuhiko Nishiyama(Tokyo Inst. of Tech.) / Yasuo Kimura(Tokyo Univ. of Tech.) / Tomoaki Terasako(Ehime Univ.) / Fumihiko Hirose(Yamagata Univ.) / Takuya Tsutsumi(NTT) |
| Paper Information | |
| Registration To | Technical Committee on Lasers and Quantum Electronics / Technical Committee on Component Parts and Materials / Technical Committee on Electron Devices |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Optimization of lateral Mg activation in LEDs with GaN tunnel junctions |
| Sub Title (in English) | |
| Keyword(1) | GaN tunnel junctions |
| Keyword(2) | lateral Mg activation |
| Keyword(3) | annealing |
| 1st Author's Name | Mikiko Tasaki |
| 1st Author's Affiliation | Meijo University(Meijo Univ.) |
| 2nd Author's Name | Kazuki Kiyohara |
| 2nd Author's Affiliation | Meijo University(Meijo Univ.) |
| 3rd Author's Name | Mahito Odawara |
| 3rd Author's Affiliation | Meijo University(Meijo Univ.) |
| 4th Author's Name | Taichi Ito |
| 4th Author's Affiliation | Meijo University(Meijo Univ.) |
| 5th Author's Name | Tetsuya Takeuchi |
| 5th Author's Affiliation | Meijo University(Meijo Univ.) |
| 6th Author's Name | Satoshi Kamiyama |
| 6th Author's Affiliation | Meijo University(Meijo Univ.) |
| 7th Author's Name | Motoaki Iwaya |
| 7th Author's Affiliation | Meijo University(Meijo Univ.) |
| 8th Author's Name | Isamu Akasaki |
| 8th Author's Affiliation | Nagoya University(Nagoya Univ.) |
| Date | 2020-11-27 |
| Paper # | ED2020-18,CPM2020-39,LQE2020-69 |
| Volume (vol) | vol.120 |
| Number (no) | ED-254,CPM-255,LQE-256 |
| Page | pp.pp.67-70(ED), pp.67-70(CPM), pp.67-70(LQE), |
| #Pages | 4 |
| Date of Issue | 2020-11-19 (ED, CPM, LQE) |