| Presentation | 2020-11-26 Study on p/n conductivity control of epitaxial AlInN films Taiki Nakabayashi, Haruka Takada, Takashi Egawa, Makoto Miyoshi, Tetsuya Takeuchi, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In this study, we attempted the p/n conductivity control of epitaxial AlInN films grown by metalorganic chemical vapor deposition (MOCVD) by means of the impurity-doping of Si and Mg atoms and the polarization-doping. First, The Si-doped AlInN films with a Si concentration of approximately 8 × 10^18 cm^-3 with a thickness of 300 nm were grown nearly lattice-matched to c-plane GaN-on-sapphire templates. By using TLM method, the vertical direction resistivity of the 300-nm-thick n-type AlInN film was estimated to be 5.8×10^-4 Ωcm^2. Then, Mg doped AlInN films with a thickness of approximately 100 nm were grown on c-plane GaN-on-sapphire templates, the AlInN film showed a relative smooth surface at a high Mg concentration of approximately 1.5 × 10^19 cm^-3. Finally, graded AlInN films with a thickness of 100 nm were grown on c-plane GaN-on-sapphire templates, aiming at the generation of polarization-induced holes. It was confirmed that an AlInN film was grown with an InN molar fraction variation ranging from 0.14 to 0.19. The Hall effect measurement showed less temperature dependence of holes, which confirmed the generation of polarization-induced holes. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | n-type AlInN / Mg doped AlInN / polarization-doping / graded AlInN / MOCVD |
| Paper # | ED2020-4,CPM2020-25,LQE2020-55 |
| Date of Issue | 2020-11-19 (ED, CPM, LQE) |
| Conference Information | |
| Committee | LQE / CPM / ED |
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| Conference Date | 2020/11/26(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Online |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Hiroshi Yasaka(Tohoku Univ.) / Mayumi Takeyama(Kitami Inst. of Tech.) / Michihiko Suhara(TMU) |
| Vice Chair | Toshitada Umezawa(NICT) / Yuichi Nakamura(Toyohashi Univ. of Tech.) / Hiroki Fujishiro(Tokyo Univ. of Science) |
| Secretary | Toshitada Umezawa(Osaka Univ.) / Yuichi Nakamura(NTT) / Hiroki Fujishiro(Hirosaki Univ.) |
| Assistant | Kazuue Fujita(Hamamatsu) / Nobuhiko Nishiyama(Tokyo Inst. of Tech.) / Yasuo Kimura(Tokyo Univ. of Tech.) / Tomoaki Terasako(Ehime Univ.) / Fumihiko Hirose(Yamagata Univ.) / Takuya Tsutsumi(NTT) |
| Paper Information | |
| Registration To | Technical Committee on Lasers and Quantum Electronics / Technical Committee on Component Parts and Materials / Technical Committee on Electron Devices |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Study on p/n conductivity control of epitaxial AlInN films |
| Sub Title (in English) | |
| Keyword(1) | n-type AlInN |
| Keyword(2) | Mg doped AlInN |
| Keyword(3) | polarization-doping |
| Keyword(4) | graded AlInN |
| Keyword(5) | MOCVD |
| 1st Author's Name | Taiki Nakabayashi |
| 1st Author's Affiliation | Nagoya Institute Of Technology(NIT) |
| 2nd Author's Name | Haruka Takada |
| 2nd Author's Affiliation | Nagoya Institute Of Technology(NIT) |
| 3rd Author's Name | Takashi Egawa |
| 3rd Author's Affiliation | Nagoya Institute Of Technology(NIT) |
| 4th Author's Name | Makoto Miyoshi |
| 4th Author's Affiliation | Nagoya Institute Of Technology(NIT) |
| 5th Author's Name | Tetsuya Takeuchi |
| 5th Author's Affiliation | Meijo University(Meijo Univ.) |
| Date | 2020-11-26 |
| Paper # | ED2020-4,CPM2020-25,LQE2020-55 |
| Volume (vol) | vol.120 |
| Number (no) | ED-254,CPM-255,LQE-256 |
| Page | pp.pp.13-16(ED), pp.13-16(CPM), pp.13-16(LQE), |
| #Pages | 4 |
| Date of Issue | 2020-11-19 (ED, CPM, LQE) |