| Presentation | 2020-12-02 Coexistence of digital and analog resistive switching in Ta2O5-based ReRAM cells with TiN electrodes. Kazutaka Yamada, Tsunenobu Kimoto, Yusuke Nishi, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In this study, we have investigated the resistive switching (RS) characteristics of Ni/Ta2O5/TiN stack structure devices. Two different RS characteristics were observed in the same device. After forming, it showed abrupt (digital) RS characteristics. On the other hand, the device that transitioned to a particular state by the application of voltage to the initial state showed gradual (analog) RS characteristics. Based on the electrical characteristics of the devices and the distribution of oxygen vacancies in the Ta2O5 layer, we propose an RS operation model. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | ReRAM / Titanium nitride / Tantalum oxide / Electrode materials |
| Paper # | EID2020-11,SDM2020-45 |
| Date of Issue | 2020-11-25 (EID, SDM) |
| Conference Information | |
| Committee | EID / SDM / ITE-IDY |
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| Conference Date | 2020/12/2(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Online |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Rumiko Yamaguchi(Akita Univ.) / Hiroshige Hirano(TowerPartners Semiconductor) |
| Vice Chair | Masahiro Yamaguchi(Tokyo Inst. of Tech.) / Tomoyuki Ishihara(Japan Display) / Shunichiro Ohmi(Tokyo Inst. of Tech.) |
| Secretary | Masahiro Yamaguchi(NTT) / Tomoyuki Ishihara(NHK) / Shunichiro Ohmi(AIST) / (Nihon Univ.) |
| Assistant | Mutsumi Kimura(Ryukoku Univ.) / Tomokazu Shiga(Univ. of Electro-Comm.) / Hiroko Kominami(Shizuoka Univ.) / Masanobu Mizusaki(SHARP) / Masayuki Kanbara(NAIST) / Taiji Noda(Panasonic) / Tomoyuki Suwa(Tohoku Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Electronic Information Displays / Technical Committee on Silicon Device and Materials / Technical Group on Information Display |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Coexistence of digital and analog resistive switching in Ta2O5-based ReRAM cells with TiN electrodes. |
| Sub Title (in English) | |
| Keyword(1) | ReRAM |
| Keyword(2) | Titanium nitride |
| Keyword(3) | Tantalum oxide |
| Keyword(4) | Electrode materials |
| 1st Author's Name | Kazutaka Yamada |
| 1st Author's Affiliation | Kyoto University(Kyoto Univ.) |
| 2nd Author's Name | Tsunenobu Kimoto |
| 2nd Author's Affiliation | Kyoto University(Kyoto Univ.) |
| 3rd Author's Name | Yusuke Nishi |
| 3rd Author's Affiliation | Kyoto University/National Institute of Technology, Maizuru College(Kyoto Univ./NIT, Maizuru College) |
| Date | 2020-12-02 |
| Paper # | EID2020-11,SDM2020-45 |
| Volume (vol) | vol.120 |
| Number (no) | EID-272,SDM-273 |
| Page | pp.pp.42-45(EID), pp.42-45(SDM), |
| #Pages | 4 |
| Date of Issue | 2020-11-25 (EID, SDM) |