Presentation 2020-12-02
Improvement of Al2O3/GaN MOS Characteristics using Bilayer Structure
Sho Sonehara, Mutsunori Uenuma, Yukiharu Uraoka,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English)
Keyword(in Japanese) (See Japanese page)
Keyword(in English)
Paper # EID2020-9,SDM2020-43
Date of Issue 2020-11-25 (EID, SDM)

Conference Information
Committee EID / SDM / ITE-IDY
Conference Date 2020/12/2(1days)
Place (in Japanese) (See Japanese page)
Place (in English) Online
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair Rumiko Yamaguchi(Akita Univ.) / Hiroshige Hirano(TowerPartners Semiconductor)
Vice Chair Masahiro Yamaguchi(Tokyo Inst. of Tech.) / Tomoyuki Ishihara(Japan Display) / Shunichiro Ohmi(Tokyo Inst. of Tech.)
Secretary Masahiro Yamaguchi(NTT) / Tomoyuki Ishihara(NHK) / Shunichiro Ohmi(AIST) / (Nihon Univ.)
Assistant Mutsumi Kimura(Ryukoku Univ.) / Tomokazu Shiga(Univ. of Electro-Comm.) / Hiroko Kominami(Shizuoka Univ.) / Masanobu Mizusaki(SHARP) / Masayuki Kanbara(NAIST) / Taiji Noda(Panasonic) / Tomoyuki Suwa(Tohoku Univ.)

Paper Information
Registration To Technical Committee on Electronic Information Displays / Technical Committee on Silicon Device and Materials / Technical Group on Information Display
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Improvement of Al2O3/GaN MOS Characteristics using Bilayer Structure
Sub Title (in English)
Keyword(1)
1st Author's Name Sho Sonehara
1st Author's Affiliation Nara Institute of Science and Technology(NAIST)
2nd Author's Name Mutsunori Uenuma
2nd Author's Affiliation Nara Institute of Science and Technology(NAIST)
3rd Author's Name Yukiharu Uraoka
3rd Author's Affiliation Nara Institute of Science and Technology(NAIST)
Date 2020-12-02
Paper # EID2020-9,SDM2020-43
Volume (vol) vol.120
Number (no) EID-272,SDM-273
Page pp.pp.35-36(EID), pp.35-36(SDM),
#Pages 2
Date of Issue 2020-11-25 (EID, SDM)