| Presentation | 2020-12-02 Ferroelectric gate thin film transistor using oxide semiconductor Ga-Sn-O Tomoki Fukui, Kouki Nakagawa, Mutsumi Kimura, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We fabricated a ferroelectric-gate thin-film transistor (FeTFT) with an amorphous Ga-Sn-O (GTO) channel and a ferroelectric (Bi,La)?Ti?O?? (BLT) gate insulator, and evaluated the TFT characteristics and the crystallinity of BLT by X-ray diffraction (XRD). First, in order to decrease the leakage current and to obtain TFT characteristics , the annealing conditions for good crystalline of BLT-thin-film by the RF magnetron sputtering method were considered. In this study, the annealing was performed at three different temperature. Second, the post-annealing conditions of GTO thin film to obtain high-performance drain current versus gate voltage (I-V) characteristics were investigated to prepare the excellent a-GTO channel. As a result, a TFT with mobility 1.58 cm? / Vs, SS value 0.84 V, threshold voltage Vth 5.05 V, on-current ION 0.16 mA, and memory window 3.5 V TFT, and counterclockwise hysteresis were confirmed at post-annealing 100 ℃.We think that increasing the ferroelectricity of BLT will improve the on-current. This is because ferroelectric film can induce large charge density owing to the spontaneous polarization. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Oxide Semiconductor / Ga-Sn-O(GTO) / Ferroelectric / (Bi,La)?Ti?O??(BLT) / Ferroelectric-gate thin-film Transistor (FeTFT) |
| Paper # | EID2020-14,SDM2020-48 |
| Date of Issue | 2020-11-25 (EID, SDM) |
| Conference Information | |
| Committee | EID / SDM / ITE-IDY |
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| Conference Date | 2020/12/2(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Online |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Rumiko Yamaguchi(Akita Univ.) / Hiroshige Hirano(TowerPartners Semiconductor) |
| Vice Chair | Masahiro Yamaguchi(Tokyo Inst. of Tech.) / Tomoyuki Ishihara(Japan Display) / Shunichiro Ohmi(Tokyo Inst. of Tech.) |
| Secretary | Masahiro Yamaguchi(NTT) / Tomoyuki Ishihara(NHK) / Shunichiro Ohmi(AIST) / (Nihon Univ.) |
| Assistant | Mutsumi Kimura(Ryukoku Univ.) / Tomokazu Shiga(Univ. of Electro-Comm.) / Hiroko Kominami(Shizuoka Univ.) / Masanobu Mizusaki(SHARP) / Masayuki Kanbara(NAIST) / Taiji Noda(Panasonic) / Tomoyuki Suwa(Tohoku Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Electronic Information Displays / Technical Committee on Silicon Device and Materials / Technical Group on Information Display |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Ferroelectric gate thin film transistor using oxide semiconductor Ga-Sn-O |
| Sub Title (in English) | |
| Keyword(1) | Oxide Semiconductor |
| Keyword(2) | Ga-Sn-O(GTO) |
| Keyword(3) | Ferroelectric |
| Keyword(4) | (Bi,La)?Ti?O??(BLT) |
| Keyword(5) | Ferroelectric-gate thin-film Transistor (FeTFT) |
| 1st Author's Name | Tomoki Fukui |
| 1st Author's Affiliation | Ryukoku Univercity(Ryukoku Univ) |
| 2nd Author's Name | Kouki Nakagawa |
| 2nd Author's Affiliation | Ryukoku Univercity(Ryukoku Univ) |
| 3rd Author's Name | Mutsumi Kimura |
| 3rd Author's Affiliation | Ryukoku Univercity(Ryukoku Univ) |
| Date | 2020-12-02 |
| Paper # | EID2020-14,SDM2020-48 |
| Volume (vol) | vol.120 |
| Number (no) | EID-272,SDM-273 |
| Page | pp.pp.54-57(EID), pp.54-57(SDM), |
| #Pages | 4 |
| Date of Issue | 2020-11-25 (EID, SDM) |