| Presentation | 2020-12-02 Phase Change Random Access memory using Cu2GeTe3 Shihori Akane, Isao Horiuchi, Mutsumi Kimura, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We are conducting research on Phase Change Random Access Memory (PCRAM) using “Cu2GeTe3: Copper-Germanium-Tellurium (CGT)”. The fast crystallization speed and good reversibility between the amorphous and crystalline states make “Ge2Sb2Te5:Germanium-Antimony-Tellurium(GST)” the most popular phase change material. CGT is expected to save energy because its amorphization temperature is lower and cllistallization temperature is higher than that of GST, was used as the phase change material of PCRAM. In this study, we fabricated PCRAM with different CGT film thickness and measured I-V characteristics. All devices showed resistive switching behavior caused by phase change of CGT. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | PCRAM / phase change material / Cu2GeTe3 / amorphous / crystal |
| Paper # | EID2020-13,SDM2020-47 |
| Date of Issue | 2020-11-25 (EID, SDM) |
| Conference Information | |
| Committee | EID / SDM / ITE-IDY |
|---|---|
| Conference Date | 2020/12/2(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Online |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Rumiko Yamaguchi(Akita Univ.) / Hiroshige Hirano(TowerPartners Semiconductor) |
| Vice Chair | Masahiro Yamaguchi(Tokyo Inst. of Tech.) / Tomoyuki Ishihara(Japan Display) / Shunichiro Ohmi(Tokyo Inst. of Tech.) |
| Secretary | Masahiro Yamaguchi(NTT) / Tomoyuki Ishihara(NHK) / Shunichiro Ohmi(AIST) / (Nihon Univ.) |
| Assistant | Mutsumi Kimura(Ryukoku Univ.) / Tomokazu Shiga(Univ. of Electro-Comm.) / Hiroko Kominami(Shizuoka Univ.) / Masanobu Mizusaki(SHARP) / Masayuki Kanbara(NAIST) / Taiji Noda(Panasonic) / Tomoyuki Suwa(Tohoku Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Electronic Information Displays / Technical Committee on Silicon Device and Materials / Technical Group on Information Display |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Phase Change Random Access memory using Cu2GeTe3 |
| Sub Title (in English) | |
| Keyword(1) | PCRAM |
| Keyword(2) | phase change material |
| Keyword(3) | Cu2GeTe3 |
| Keyword(4) | amorphous |
| Keyword(5) | crystal |
| 1st Author's Name | Shihori Akane |
| 1st Author's Affiliation | Ryukoku University(Ryukoku Univ) |
| 2nd Author's Name | Isao Horiuchi |
| 2nd Author's Affiliation | KOA corporation(KOA Corp) |
| 3rd Author's Name | Mutsumi Kimura |
| 3rd Author's Affiliation | Ryukoku University(Ryukoku Univ) |
| Date | 2020-12-02 |
| Paper # | EID2020-13,SDM2020-47 |
| Volume (vol) | vol.120 |
| Number (no) | EID-272,SDM-273 |
| Page | pp.pp.50-53(EID), pp.50-53(SDM), |
| #Pages | 4 |
| Date of Issue | 2020-11-25 (EID, SDM) |