| Presentation | 2020-12-02 [Special Invited Talk] Defects control in oxide semiconductors at low-temperature and its application to flexible devices Yusaku Magari, Mamoru Furuta, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | High-performance In?Ga?Zn?O (IGZO) Schottky diodes (SDs) were fabricated using hydrogenated IGZO (IGZO:H) at a maximum process temperature of 150 °C. The IGZO:H was prepared by Ar+O2+H2 sputtering. IGZO:H SDs on a glass substrate exhibited superior electrical properties with a very high rectification ratio of 3.8×1010, an extremely large Schottky barrier height of 1.17 eV, and a low ideality factor of 1.07. The IGZO:H plays a key role in improving the Schottky interface quality, namely, the increase of Schottky barrier height and the decrease of oxygen vacancies, and the reduction of near-conduction band minimum states. Finally, we fabricated flexible IGZO:H SD on a polyethylene naphthalate substrate, and it exhibited recorded electrical properties with rectification ratio of 1.7×109, Schottky barrier height of 1.12 eV, and ideality factor of 1.10. To the best of our knowledge, both the IGZO:H SDs formed on glass and polyethylene naphthalate substrates achieved the best performance among the IGZO SDs reported to date. The proposed method successfully demonstrated great potential for future flexible electronics applications. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Oxide semiconductor / Hydrogenated In?Ga?Zn?O / Schottky diode / Flexible device |
| Paper # | EID2020-10,SDM2020-44 |
| Date of Issue | 2020-11-25 (EID, SDM) |
| Conference Information | |
| Committee | EID / SDM / ITE-IDY |
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| Conference Date | 2020/12/2(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Online |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Rumiko Yamaguchi(Akita Univ.) / Hiroshige Hirano(TowerPartners Semiconductor) |
| Vice Chair | Masahiro Yamaguchi(Tokyo Inst. of Tech.) / Tomoyuki Ishihara(Japan Display) / Shunichiro Ohmi(Tokyo Inst. of Tech.) |
| Secretary | Masahiro Yamaguchi(NTT) / Tomoyuki Ishihara(NHK) / Shunichiro Ohmi(AIST) / (Nihon Univ.) |
| Assistant | Mutsumi Kimura(Ryukoku Univ.) / Tomokazu Shiga(Univ. of Electro-Comm.) / Hiroko Kominami(Shizuoka Univ.) / Masanobu Mizusaki(SHARP) / Masayuki Kanbara(NAIST) / Taiji Noda(Panasonic) / Tomoyuki Suwa(Tohoku Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Electronic Information Displays / Technical Committee on Silicon Device and Materials / Technical Group on Information Display |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | [Special Invited Talk] Defects control in oxide semiconductors at low-temperature and its application to flexible devices |
| Sub Title (in English) | |
| Keyword(1) | Oxide semiconductor |
| Keyword(2) | Hydrogenated In?Ga?Zn?O |
| Keyword(3) | Schottky diode |
| Keyword(4) | Flexible device |
| 1st Author's Name | Yusaku Magari |
| 1st Author's Affiliation | Kochi University of Technology(Kochi Univ. of Technol.) |
| 2nd Author's Name | Mamoru Furuta |
| 2nd Author's Affiliation | Kochi University of Technology(Kochi Univ. of Technol.) |
| Date | 2020-12-02 |
| Paper # | EID2020-10,SDM2020-44 |
| Volume (vol) | vol.120 |
| Number (no) | EID-272,SDM-273 |
| Page | pp.pp.37-41(EID), pp.37-41(SDM), |
| #Pages | 5 |
| Date of Issue | 2020-11-25 (EID, SDM) |