Presentation | 2020-12-02 Characterization of amorphous Ga-Sn-O thin film thermoelectric conversion element Yuhei Yamamoto, Tatuya Aramaki, Ryo Ito, Mutumi Kimura, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Most of the exhaust heat generated from factories, automobiles, PCs, etc. is unused. Thermoelectric conversion device can convert the heat energy into electrical energy. And it’s attracting attention as a clean power generation method. Among them, thermoelectric materials with transparency and flexibility can be applied to power generation using window glass and IoT sensors. Therefore, we are researching thin film thermoelectric conversion devices using GTO thin films which are transparent, flexible and rare metal-free oxide semiconductors. In this study, we evaluated the dependence of the oxygen flow ratio during sputtering and temperature post-annealing after film formation of the GTO thermoelectric conversion device. The sample was annealed at a low temperature of 100 °C to 400 °C. The conductivity improved until the temperature after annealing reached 200°C. After that, when the annealing temperature exceeded 300°C, the conductivity decreased. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Thermoelectric conversion device / Seebeck effect / Oxide semiconductor / Transparent oxide semiconductor |
Paper # | EID2020-3,SDM2020-37 |
Date of Issue | 2020-11-25 (EID, SDM) |
Conference Information | |
Committee | EID / SDM / ITE-IDY |
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Conference Date | 2020/12/2(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | Online |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | Rumiko Yamaguchi(Akita Univ.) / Hiroshige Hirano(TowerPartners Semiconductor) |
Vice Chair | Masahiro Yamaguchi(Tokyo Inst. of Tech.) / Tomoyuki Ishihara(Japan Display) / Shunichiro Ohmi(Tokyo Inst. of Tech.) |
Secretary | Masahiro Yamaguchi(NTT) / Tomoyuki Ishihara(NHK) / Shunichiro Ohmi(AIST) / (Nihon Univ.) |
Assistant | Mutsumi Kimura(Ryukoku Univ.) / Tomokazu Shiga(Univ. of Electro-Comm.) / Hiroko Kominami(Shizuoka Univ.) / Masanobu Mizusaki(SHARP) / Masayuki Kanbara(NAIST) / Taiji Noda(Panasonic) / Tomoyuki Suwa(Tohoku Univ.) |
Paper Information | |
Registration To | Technical Committee on Electronic Information Displays / Technical Committee on Silicon Device and Materials / Technical Group on Information Display |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Characterization of amorphous Ga-Sn-O thin film thermoelectric conversion element |
Sub Title (in English) | |
Keyword(1) | Thermoelectric conversion device |
Keyword(2) | Seebeck effect |
Keyword(3) | Oxide semiconductor |
Keyword(4) | Transparent oxide semiconductor |
1st Author's Name | Yuhei Yamamoto |
1st Author's Affiliation | Ryukoku University(Ryukoku Univ.) |
2nd Author's Name | Tatuya Aramaki |
2nd Author's Affiliation | Ryukoku University(Ryukoku Univ.) |
3rd Author's Name | Ryo Ito |
3rd Author's Affiliation | Ryukoku University(Ryukoku Univ.) |
4th Author's Name | Mutumi Kimura |
4th Author's Affiliation | Ryukoku University(Ryukoku Univ.) |
Date | 2020-12-02 |
Paper # | EID2020-3,SDM2020-37 |
Volume (vol) | vol.120 |
Number (no) | EID-272,SDM-273 |
Page | pp.pp.9-12(EID), pp.9-12(SDM), |
#Pages | 4 |
Date of Issue | 2020-11-25 (EID, SDM) |