Presentation 2020-12-02
Characterization of amorphous Ga-Sn-O thin film thermoelectric conversion element
Yuhei Yamamoto, Tatuya Aramaki, Ryo Ito, Mutumi Kimura,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Most of the exhaust heat generated from factories, automobiles, PCs, etc. is unused. Thermoelectric conversion device can convert the heat energy into electrical energy. And it’s attracting attention as a clean power generation method. Among them, thermoelectric materials with transparency and flexibility can be applied to power generation using window glass and IoT sensors. Therefore, we are researching thin film thermoelectric conversion devices using GTO thin films which are transparent, flexible and rare metal-free oxide semiconductors. In this study, we evaluated the dependence of the oxygen flow ratio during sputtering and temperature post-annealing after film formation of the GTO thermoelectric conversion device. The sample was annealed at a low temperature of 100 °C to 400 °C. The conductivity improved until the temperature after annealing reached 200°C. After that, when the annealing temperature exceeded 300°C, the conductivity decreased.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Thermoelectric conversion device / Seebeck effect / Oxide semiconductor / Transparent oxide semiconductor
Paper # EID2020-3,SDM2020-37
Date of Issue 2020-11-25 (EID, SDM)

Conference Information
Committee EID / SDM / ITE-IDY
Conference Date 2020/12/2(1days)
Place (in Japanese) (See Japanese page)
Place (in English) Online
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair Rumiko Yamaguchi(Akita Univ.) / Hiroshige Hirano(TowerPartners Semiconductor)
Vice Chair Masahiro Yamaguchi(Tokyo Inst. of Tech.) / Tomoyuki Ishihara(Japan Display) / Shunichiro Ohmi(Tokyo Inst. of Tech.)
Secretary Masahiro Yamaguchi(NTT) / Tomoyuki Ishihara(NHK) / Shunichiro Ohmi(AIST) / (Nihon Univ.)
Assistant Mutsumi Kimura(Ryukoku Univ.) / Tomokazu Shiga(Univ. of Electro-Comm.) / Hiroko Kominami(Shizuoka Univ.) / Masanobu Mizusaki(SHARP) / Masayuki Kanbara(NAIST) / Taiji Noda(Panasonic) / Tomoyuki Suwa(Tohoku Univ.)

Paper Information
Registration To Technical Committee on Electronic Information Displays / Technical Committee on Silicon Device and Materials / Technical Group on Information Display
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Characterization of amorphous Ga-Sn-O thin film thermoelectric conversion element
Sub Title (in English)
Keyword(1) Thermoelectric conversion device
Keyword(2) Seebeck effect
Keyword(3) Oxide semiconductor
Keyword(4) Transparent oxide semiconductor
1st Author's Name Yuhei Yamamoto
1st Author's Affiliation Ryukoku University(Ryukoku Univ.)
2nd Author's Name Tatuya Aramaki
2nd Author's Affiliation Ryukoku University(Ryukoku Univ.)
3rd Author's Name Ryo Ito
3rd Author's Affiliation Ryukoku University(Ryukoku Univ.)
4th Author's Name Mutumi Kimura
4th Author's Affiliation Ryukoku University(Ryukoku Univ.)
Date 2020-12-02
Paper # EID2020-3,SDM2020-37
Volume (vol) vol.120
Number (no) EID-272,SDM-273
Page pp.pp.9-12(EID), pp.9-12(SDM),
#Pages 4
Date of Issue 2020-11-25 (EID, SDM)